{"title":"CMOS SOI图像传感器","authors":"I. Brouk, Y. Nemirovsky","doi":"10.1109/ICECS.2004.1399638","DOIUrl":null,"url":null,"abstract":"Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are presented. The peak of photodiode quantum efficiency is obtained for the wavelengths of 400-500 nm. In addition, noise measurements of the 1/f noise in P-MOS and N-MOS transistors for analog applications are reported under wide bias conditions ranging from subthreshold to saturation. Two implementations (in regular and SOI wafers) of 0.35 /spl mu/m CMOS analog process are compared and it is found that they exhibit similar 1/f noise. The results of this study are useful to the design and modeling of 1/f noise of CMOS analog circuits.","PeriodicalId":38467,"journal":{"name":"Giornale di Storia Costituzionale","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"CMOS SOI image sensor\",\"authors\":\"I. Brouk, Y. Nemirovsky\",\"doi\":\"10.1109/ICECS.2004.1399638\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are presented. The peak of photodiode quantum efficiency is obtained for the wavelengths of 400-500 nm. In addition, noise measurements of the 1/f noise in P-MOS and N-MOS transistors for analog applications are reported under wide bias conditions ranging from subthreshold to saturation. Two implementations (in regular and SOI wafers) of 0.35 /spl mu/m CMOS analog process are compared and it is found that they exhibit similar 1/f noise. The results of this study are useful to the design and modeling of 1/f noise of CMOS analog circuits.\",\"PeriodicalId\":38467,\"journal\":{\"name\":\"Giornale di Storia Costituzionale\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Giornale di Storia Costituzionale\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECS.2004.1399638\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"Arts and Humanities\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Giornale di Storia Costituzionale","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2004.1399638","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Arts and Humanities","Score":null,"Total":0}
引用次数: 10
摘要
介绍了在SOI晶圆内实现的CMOS相机的设计、运行和测量结果。在400 ~ 500 nm波长处，光电二极管量子效率达到峰值。此外，在从亚阈值到饱和的宽偏置条件下，对用于模拟应用的P-MOS和N-MOS晶体管中的1/f噪声进行了噪声测量。比较了两种0.35 /spl μ l /m CMOS模拟工艺的实现(在普通晶圆和SOI晶圆上)，发现它们具有相似的1/f噪声。研究结果对CMOS模拟电路1/f噪声的设计和建模具有一定的指导意义。
Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are presented. The peak of photodiode quantum efficiency is obtained for the wavelengths of 400-500 nm. In addition, noise measurements of the 1/f noise in P-MOS and N-MOS transistors for analog applications are reported under wide bias conditions ranging from subthreshold to saturation. Two implementations (in regular and SOI wafers) of 0.35 /spl mu/m CMOS analog process are compared and it is found that they exhibit similar 1/f noise. The results of this study are useful to the design and modeling of 1/f noise of CMOS analog circuits.
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