Matthias M. Minjauw, J. Dendooven, Boris Capon, C. Detavernier, M. Schaekers
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Low temperature thermal and plasma enhanced atomic layer deposition of ruthenium using RuO4 and H2/H2-plasma
A thermal (RuO4/H2-gas) and a plasma enhanced (RuO4/H2-plasma) atomic layer deposition (ALD) process for deposition of Ru are reported. The ALD characteristics and film properties of both processes are presented. The thermal process is compared to the plasma process in terms of film properties as a function of sample temperature. Finally, a discussion about the probable ALD reaction mechanisms is given.
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