{"title":"H2S退火和缓冲层对四元化合物靶溅射CZTS太阳能电池的影响","authors":"P. Bras, J. Sterner","doi":"10.1109/PVSC.2014.6924924","DOIUrl":null,"url":null,"abstract":"Sputtering Cu2ZnSnS4 absorbers from a quaternary compound target has not been deeply investigated yet although it is a fast process that could be adapted to an industrial scale. We propose a new approach based on an in-line vacuum system for the complete device. The effects of H2S annealing parameters as well as buffer type are investigated. We present a 4.2% efficiency device based on stainless steel substrate.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"64 1","pages":"0328-0331"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Influence of H2S annealing and buffer layer on CZTS solar cells sputtered from a quaternary compound target\",\"authors\":\"P. Bras, J. Sterner\",\"doi\":\"10.1109/PVSC.2014.6924924\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Sputtering Cu2ZnSnS4 absorbers from a quaternary compound target has not been deeply investigated yet although it is a fast process that could be adapted to an industrial scale. We propose a new approach based on an in-line vacuum system for the complete device. The effects of H2S annealing parameters as well as buffer type are investigated. We present a 4.2% efficiency device based on stainless steel substrate.\",\"PeriodicalId\":6649,\"journal\":{\"name\":\"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)\",\"volume\":\"64 1\",\"pages\":\"0328-0331\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2014.6924924\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2014.6924924","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of H2S annealing and buffer layer on CZTS solar cells sputtered from a quaternary compound target
Sputtering Cu2ZnSnS4 absorbers from a quaternary compound target has not been deeply investigated yet although it is a fast process that could be adapted to an industrial scale. We propose a new approach based on an in-line vacuum system for the complete device. The effects of H2S annealing parameters as well as buffer type are investigated. We present a 4.2% efficiency device based on stainless steel substrate.