CH3NH3PbI3钙钛矿吸收层和CdS缓冲层薄膜的合成、表征和器件模拟

Khursheed Ahmad Parrey, Nisha, A. Aziz, S. Ansari, A. Niazi
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摘要

本文合成了卤化物钙钛矿吸收剂CH3NH3PbI3和CdS作为钙钛矿光伏器件的电荷传输层。采用x射线衍射、紫外可见分光光度和扫描电镜对钙钛矿吸收剂和CdS进行了表征。发现CH3NH3PbI3和CdS的能隙和结构分别适合作为钙钛矿太阳能电池器件的吸收层和电子传输层。利用SCAPS-1D太阳能电池电容模拟器软件对CH3NH3PbI3钙钛矿太阳能电池进行了数值模拟。通过用CdS(即孔阻挡层)取代传统的致密TiO2层,模拟了钙钛矿太阳能电池的最佳效率,因为CdS层在阳光连续照射下比TiO2具有更大的光稳定性。研究了吸收层厚度、体缺陷和界面缺陷等层参数对镉基钙钛矿光伏器件性能的影响。结果表明,这些参数对开路电压Voc、短路电流Isc、填充系数FF和功率转换效率有较大影响。本文记录并介绍了太阳能光伏器件的器件特性及优化设计。本文合成了卤化物钙钛矿吸收剂CH3NH3PbI3和CdS作为钙钛矿光伏器件的电荷传输层。采用x射线衍射、紫外可见分光光度和扫描电镜对钙钛矿吸收剂和CdS进行了表征。发现CH3NH3PbI3和CdS的能隙和结构分别适合作为钙钛矿太阳能电池器件的吸收层和电子传输层。利用SCAPS-1D太阳能电池电容模拟器软件对CH3NH3PbI3钙钛矿太阳能电池进行了数值模拟。通过用CdS(即孔阻挡层)取代传统的致密TiO2层,模拟了钙钛矿太阳能电池的最佳效率,因为CdS层在阳光连续照射下比TiO2具有更大的光稳定性。研究了吸收层厚度、体缺陷和界面缺陷等层参数对镉基钙钛矿光伏器件性能的影响。据观察,这些参数…
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Synthesis, characterization and device simulation of the thin films of CH3NH3PbI3 perovskite absorber and CdS buffer layer
Here we synthesized halide perovskite absorber CH3NH3PbI3 and CdS as charge transporting layer for perovskite photovoltaic device. Perovskite absorber and CdS were characterized by X-ray diffraction, UV-Visible spectrophotometry and SEM. The energy gap and structure of CH3NH3PbI3 and CdS were found to be suitable for use as absorber and electron transporting layer in perovskite solar cell device respectively. Numerical simulation of CH3NH3PbI3 perovskite solar cells was then carried out using the SCAPS-1D solar cell capacitance simulator software. A perovskite solar cell was simulated for best efficiency by replacing the traditional compact TiO2 layer with CdS (i.e., a hole-blocking layer) because CdS layers possess a greater photostability than TiO2 with continuous illumination of sunlight. We investigated the effect of layer parameters like absorber thickness, bulk defects, and interface defects on the device performance of CdS based perovskite photovoltaic device. It was observed that these parameters have strong impact on open circuit voltage Voc, short circuit current Isc, fillfactor (FF) and the power conversion efficiency. The device characteristics and optimization of the solar photovoltaic device was recorded and presented in paper.Here we synthesized halide perovskite absorber CH3NH3PbI3 and CdS as charge transporting layer for perovskite photovoltaic device. Perovskite absorber and CdS were characterized by X-ray diffraction, UV-Visible spectrophotometry and SEM. The energy gap and structure of CH3NH3PbI3 and CdS were found to be suitable for use as absorber and electron transporting layer in perovskite solar cell device respectively. Numerical simulation of CH3NH3PbI3 perovskite solar cells was then carried out using the SCAPS-1D solar cell capacitance simulator software. A perovskite solar cell was simulated for best efficiency by replacing the traditional compact TiO2 layer with CdS (i.e., a hole-blocking layer) because CdS layers possess a greater photostability than TiO2 with continuous illumination of sunlight. We investigated the effect of layer parameters like absorber thickness, bulk defects, and interface defects on the device performance of CdS based perovskite photovoltaic device. It was observed that these parameters ...
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