喷涂Ba0.6Sr0.4TiO3薄膜制备高电容密度电容器

E. Tetsi, Isabelle Bord Majek, G. Philippot, C. Aymonier, R. Lemire, J. Audet, L. Béchou, D. Drouin
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引用次数: 2

摘要

将高电容密度的去耦电容器集成到3D电子封装中间层上需要创新的介电层沉积方法。在本文中,我们报告了一种新型的低成本喷涂技术的发展,用于制造薄膜金属-绝缘体-金属(MIM)电容器。研究了连续可扩展超临界流体工艺制备Ba0.6Sr0.4TiO3纳米颗粒薄膜。所获得的电容密度符合目前的技术水平,并且通过在纳米颗粒表面接枝特定的配体可以实现泄漏电流的减少。尽管存在泄漏电流,但仍需优化,但整体性能对于3D电子封装是有希望的
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Fabrication of High Capacitance Density Capacitor Using Spray Coated Ba0.6Sr0.4TiO3 Thin Films
The integration of decoupling capacitors with high capacitance density on interposers for 3D electronics packaging requires innovative approaches for dielectric layer deposition. In this paper, we report the development of a novel and low-cost spray coating technique for the fabrication of thin film metal-insulator-metal (MIM) capacitors. We focus on thin films based on Ba0.6Sr0.4TiO3 nanoparticles synthetized using the continuous and scalable supercritical fluid process. The obtained capacitance density agrees with the state-of-the art and a reduction of the leakage current is achievable by grafting specific ligands on the nanoparticle surface. Despite the presence of leakage current which must be still optimized, the overall performance is promising for 3D electronic packaging
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