锑化铟胶体量子点的合成及一些性能研究

O. Y. Tsvetkova, S. N. Shtykov, N. D. Zhukov, T. D. Smirnova
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引用次数: 0

摘要

用已知的方法合成了锑化铟胶体量子点。利用透射电镜研究了量子点的形状和平均直径。控制胶体量子点的大小和形状为纳米粒子晶体结构的形成及其可能的物理和光学性质提供了信息。已经发现InSb量子点具有多边形形状的特征。量子点的结果与具有立方晶格结构的半导体晶格系统相对应。纳米粒子的元素分析已被x射线微量分析监测。实验测定误差不超过百分之一。根据x射线微量分析数据,量子点中铟和锑的百分比符合理论化学计量in: Sb = 1:1。其他元素的杂质均达到微量水平,证实了合成的InSb量子点的化学纯度。研究了锑化铟纳米颗粒的荧光性质。研究发现,InSb纳米粒子在室温下的发光强度不显著,这与文献数据一致。量子产率不超过1%,发光最大值在1040nm范围内。
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Synthesis and study of some properties of colloidal quantum dots of indium antimonide
Colloidal quantum dots of indium antimonide have been synthesized by a known technique. The shape and average diameters of quantum dots have been investigated by transmission electron microscopy using a transmission microscope. Controlling the size and shape of colloidal QDs provides information on the formation of the crystal structure of nanoparticles and their possible physical and optical properties. It has been found that InSb quantum dots are characterized by a polygonal shape. The results obtained for QDs correspond to the crystal lattice system of a semiconductor with a cubic crystal lattice structure. Elemental analysis of nanoparticles has been monitored by X-ray microanalysis. The experimental determination error was no more than one percent. The percentages of indium and antimony in QDs according to X-ray microanalysis data corresponded to the theoretical stoichiometry In: Sb = 1:1. Impurities of other elements constituted the level of trace amounts, which confirmed the chemical purity of the synthesized InSb QDs. The fluorescent properties of indium antimonide nanoparticles have been studied. It has been found that the luminescence intensity of InSb nanoparticles at room temperature is insignificant, which is in agreement with the literature data. The quantum yield does not exceed 1%, and the luminescence maximum lies in the range of 1040 nm.
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