{"title":"会议TU3B:热载波效应和混频器技术","authors":"Ho Huang, Z. Bardai","doi":"10.1109/MTT67880.2005.9387840","DOIUrl":null,"url":null,"abstract":"Hot carrier effects become an important consideration as device dimensions shrink to address higher frequency of operation. SiGe mixers have increasing importance due to potential for high level of integration and low cost. This session addresses the hot carrier effects in both GaAs and silicon circuits, 5 GHz mixer development, as well as tunable elements and isolation issues for insulating and silicon substrates.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Session TU3B: Hot Carrier Effects and Mixer Technology\",\"authors\":\"Ho Huang, Z. Bardai\",\"doi\":\"10.1109/MTT67880.2005.9387840\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hot carrier effects become an important consideration as device dimensions shrink to address higher frequency of operation. SiGe mixers have increasing importance due to potential for high level of integration and low cost. This session addresses the hot carrier effects in both GaAs and silicon circuits, 5 GHz mixer development, as well as tunable elements and isolation issues for insulating and silicon substrates.\",\"PeriodicalId\":13133,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MTT67880.2005.9387840\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTT67880.2005.9387840","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Session TU3B: Hot Carrier Effects and Mixer Technology
Hot carrier effects become an important consideration as device dimensions shrink to address higher frequency of operation. SiGe mixers have increasing importance due to potential for high level of integration and low cost. This session addresses the hot carrier effects in both GaAs and silicon circuits, 5 GHz mixer development, as well as tunable elements and isolation issues for insulating and silicon substrates.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
