{"title":"二维半导体中太赫兹辐射的吸收","authors":"J. Cao","doi":"10.1109/ICIMW.2004.1422180","DOIUrl":null,"url":null,"abstract":"Nonlinear free-carrier absorption of terahertz radiations in semiconductor heterojunctions have theoretically been investigated by considering multiple photon process and conduction-valence interband impact ionisation (II). We have determined the field and frequency dependent absorption rate. It is found that electron-disorder scatterings are important at low to intermediate fields, and the high field absorption is dominated by II processes.","PeriodicalId":13627,"journal":{"name":"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2004-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Absorption of terahertz radiations in two-dimensional semiconductors\",\"authors\":\"J. Cao\",\"doi\":\"10.1109/ICIMW.2004.1422180\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nonlinear free-carrier absorption of terahertz radiations in semiconductor heterojunctions have theoretically been investigated by considering multiple photon process and conduction-valence interband impact ionisation (II). We have determined the field and frequency dependent absorption rate. It is found that electron-disorder scatterings are important at low to intermediate fields, and the high field absorption is dominated by II processes.\",\"PeriodicalId\":13627,\"journal\":{\"name\":\"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIMW.2004.1422180\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIMW.2004.1422180","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Absorption of terahertz radiations in two-dimensional semiconductors
Nonlinear free-carrier absorption of terahertz radiations in semiconductor heterojunctions have theoretically been investigated by considering multiple photon process and conduction-valence interband impact ionisation (II). We have determined the field and frequency dependent absorption rate. It is found that electron-disorder scatterings are important at low to intermediate fields, and the high field absorption is dominated by II processes.
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