Pankaj Solanki, Mayur Vala, Sandip V. Bhatt, D. Dhruv, B. Kataria
{"title":"GdMnO3/Al:ZnO/STO和GdMnO3/ZnO/STO薄膜异质结构的热离子发射诱导电流-电压行为","authors":"Pankaj Solanki, Mayur Vala, Sandip V. Bhatt, D. Dhruv, B. Kataria","doi":"10.5185/amlett.2023.031730","DOIUrl":null,"url":null,"abstract":"We report the results of studies on the rectifying behaviour and tunnelling conduction in GdMnO3/ZnO/STO and GdMnO3/Al:ZnO/STO thin film heterostructures comprising of p-n junctions fabricated using the Pulsed Laser Deposition (PLD) technique. A structural study using grazing angle mode XRD depicts polycrystalline growth and confirms the phase purity. The AFM micrographs reveals the different grain growth and grain sizes of the prepared thin film heterostructures. Room temperature Raman spectra shows the presence of various vibrational modes in both the thin film heterostructures, the transport studies using I–V measurements at room temperature is explained using various models. The temperature dependent transport studies using I-V measurements at various temperatures reveal the rectifying behaviour and the difference in the I-V behaviour at various temperature can be understood on the basis of interface effect at the junction, which has been attributed to the presence of the various conduction phenomena through the junctions and the change in barrier height with the temperature for both presently studied thin film heterostructures.","PeriodicalId":7281,"journal":{"name":"Advanced Materials Letters","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thermionic Emission Induced Current-Voltage behaviour of GdMnO3/Al:ZnO/STO and GdMnO3/ZnO/STO Thin Film Heterostructures\",\"authors\":\"Pankaj Solanki, Mayur Vala, Sandip V. Bhatt, D. Dhruv, B. Kataria\",\"doi\":\"10.5185/amlett.2023.031730\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the results of studies on the rectifying behaviour and tunnelling conduction in GdMnO3/ZnO/STO and GdMnO3/Al:ZnO/STO thin film heterostructures comprising of p-n junctions fabricated using the Pulsed Laser Deposition (PLD) technique. A structural study using grazing angle mode XRD depicts polycrystalline growth and confirms the phase purity. The AFM micrographs reveals the different grain growth and grain sizes of the prepared thin film heterostructures. Room temperature Raman spectra shows the presence of various vibrational modes in both the thin film heterostructures, the transport studies using I–V measurements at room temperature is explained using various models. The temperature dependent transport studies using I-V measurements at various temperatures reveal the rectifying behaviour and the difference in the I-V behaviour at various temperature can be understood on the basis of interface effect at the junction, which has been attributed to the presence of the various conduction phenomena through the junctions and the change in barrier height with the temperature for both presently studied thin film heterostructures.\",\"PeriodicalId\":7281,\"journal\":{\"name\":\"Advanced Materials Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Materials Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.5185/amlett.2023.031730\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5185/amlett.2023.031730","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermionic Emission Induced Current-Voltage behaviour of GdMnO3/Al:ZnO/STO and GdMnO3/ZnO/STO Thin Film Heterostructures
We report the results of studies on the rectifying behaviour and tunnelling conduction in GdMnO3/ZnO/STO and GdMnO3/Al:ZnO/STO thin film heterostructures comprising of p-n junctions fabricated using the Pulsed Laser Deposition (PLD) technique. A structural study using grazing angle mode XRD depicts polycrystalline growth and confirms the phase purity. The AFM micrographs reveals the different grain growth and grain sizes of the prepared thin film heterostructures. Room temperature Raman spectra shows the presence of various vibrational modes in both the thin film heterostructures, the transport studies using I–V measurements at room temperature is explained using various models. The temperature dependent transport studies using I-V measurements at various temperatures reveal the rectifying behaviour and the difference in the I-V behaviour at various temperature can be understood on the basis of interface effect at the junction, which has been attributed to the presence of the various conduction phenomena through the junctions and the change in barrier height with the temperature for both presently studied thin film heterostructures.
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