供铜层合金化对CBRAM保持性的影响

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI:10.1109/IITC-MAM.2015.7325623

W. Devulder, K. Opsomer, M. Jurczak, L. Goux, C. Detavernier

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引用次数: 5

摘要

导电桥随机存取存储器(CBRAM)是未来存储器器件的新兴技术之一。然而，主要的挑战之一是确保高温数据的保留。本文介绍了不同铜合金作为阳离子供应层对CBRAM电池保留性能的影响。此外，还研究了铜合金的热稳定性，这对于维持器件制造过程中施加的温度很重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of alloying the copper supply layer on the retention of CBRAM

Conductive Bridge Random Access Memory (CBRAM) is one of the emerging technologies for future memory devices. However, one of the main challenges is to ensure high temperature data retention. In this work, the use of different copper alloys as cation supply layer and their influence on the retention properties of CBRAM cells are presented. Also the thermal stability of the Cu alloys, which is important to sustain the temperatures applied during device fabrication, is investigated.

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2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)

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