Y. Niida, Masaru Sato, M. Nishimori, T. Ohki, N. Nakamura
{"title":"基于传输线变压器组合技术的230 W以上、0.5-2.1 GHz宽带GaN功率放大器","authors":"Y. Niida, Masaru Sato, M. Nishimori, T. Ohki, N. Nakamura","doi":"10.1109/IMS30576.2020.9223974","DOIUrl":null,"url":null,"abstract":"We fabricated a wideband gallium nitride (GaN) power amplifier (PA) using a power combiner with impedance transformation function. We designed a four-way planar impedance transformer power combiner based on the transmission line transformer (TLT) technique. The fabricated PA exhibited an average output power (Pout) of 233 W, average power-added-efficiency (PAE) of 42 %, and average drain efficiency (η) of 47% in the frequency range of 0.5 GHz to 2.1 GHz. The fabricated P A exhibits a wider fractional bandwidth (FBW) than a reported P A with an output power of over 200 W.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"51 1","pages":"25-28"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"An over 230 W, 0.5–2.1 GHz Wideband GaN Power Amplifier using Transmission-Line-Transformer-Based Combining Technique\",\"authors\":\"Y. Niida, Masaru Sato, M. Nishimori, T. Ohki, N. Nakamura\",\"doi\":\"10.1109/IMS30576.2020.9223974\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We fabricated a wideband gallium nitride (GaN) power amplifier (PA) using a power combiner with impedance transformation function. We designed a four-way planar impedance transformer power combiner based on the transmission line transformer (TLT) technique. The fabricated PA exhibited an average output power (Pout) of 233 W, average power-added-efficiency (PAE) of 42 %, and average drain efficiency (η) of 47% in the frequency range of 0.5 GHz to 2.1 GHz. The fabricated P A exhibits a wider fractional bandwidth (FBW) than a reported P A with an output power of over 200 W.\",\"PeriodicalId\":6784,\"journal\":{\"name\":\"2020 IEEE/MTT-S International Microwave Symposium (IMS)\",\"volume\":\"51 1\",\"pages\":\"25-28\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE/MTT-S International Microwave Symposium (IMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMS30576.2020.9223974\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMS30576.2020.9223974","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An over 230 W, 0.5–2.1 GHz Wideband GaN Power Amplifier using Transmission-Line-Transformer-Based Combining Technique
We fabricated a wideband gallium nitride (GaN) power amplifier (PA) using a power combiner with impedance transformation function. We designed a four-way planar impedance transformer power combiner based on the transmission line transformer (TLT) technique. The fabricated PA exhibited an average output power (Pout) of 233 W, average power-added-efficiency (PAE) of 42 %, and average drain efficiency (η) of 47% in the frequency range of 0.5 GHz to 2.1 GHz. The fabricated P A exhibits a wider fractional bandwidth (FBW) than a reported P A with an output power of over 200 W.
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