{"title":"短信道MOS CASCODE电流参考仿真预测模型","authors":"L. Dobrescu, S. Nimara","doi":"10.1109/SMICND.2014.6966464","DOIUrl":null,"url":null,"abstract":"This paper reveals the fine border between classical cascode current references design and the modern circuits simulation using nanometer MOSFETs predictive models. Common MOS parameters used for currents ratio in cascode mirrors must be reconsidered.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"36 1","pages":"291-294"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Predictive models for short channel MOS CASCODE current references simulation\",\"authors\":\"L. Dobrescu, S. Nimara\",\"doi\":\"10.1109/SMICND.2014.6966464\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reveals the fine border between classical cascode current references design and the modern circuits simulation using nanometer MOSFETs predictive models. Common MOS parameters used for currents ratio in cascode mirrors must be reconsidered.\",\"PeriodicalId\":6616,\"journal\":{\"name\":\"2014 International Semiconductor Conference (CAS)\",\"volume\":\"36 1\",\"pages\":\"291-294\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2014.6966464\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2014.6966464","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Predictive models for short channel MOS CASCODE current references simulation
This paper reveals the fine border between classical cascode current references design and the modern circuits simulation using nanometer MOSFETs predictive models. Common MOS parameters used for currents ratio in cascode mirrors must be reconsidered.
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