量子阱GaAs/Al/sub - 1-x/Ga/sub -x/ As和Ge/Ge/sub - 1-x/Si/sub -x/中远红外辐射与热二维空穴的相互作用

V. Aleshkin, L. Vorobjev, D. Donetsky, T. Dumelow, A. Kastalsky, O. Kuznetsov, G. Mirjalili, L. K. Orlov, T. J. Parker, S. Farjami Shayesteh
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引用次数: 0

摘要

只提供摘要形式。本文研究了二维热空穴在量子阱子带之间的直接跃迁和二维空穴在量子阱(QW)加热下FIR激光辐射的调制所引起的p型GaAs-AlGaAs和Ge-GeSi结构的FIR发射。这些现象以前没有观察到。
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Interaction of far-infrared radiation with hot two-dimensional holes in the quantum wells GaAs/Al/sub 1-x/Ga/sub x/As and Ge/Ge/sub 1-x/Si/sub x/
Summary form only given. The present work is a study of FIR emission from p-type GaAs-AlGaAs and Ge-GeSi structures caused by direct transitions of hot 2D holes between quantum-well subbands and modulation of FIR laser radiation under heating of 2D holes in quantum wells (QW). These phenomena were not observed before.
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