V. Aleshkin, L. Vorobjev, D. Donetsky, T. Dumelow, A. Kastalsky, O. Kuznetsov, G. Mirjalili, L. K. Orlov, T. J. Parker, S. Farjami Shayesteh
{"title":"量子阱GaAs/Al/sub - 1-x/Ga/sub -x/ As和Ge/Ge/sub - 1-x/Si/sub -x/中远红外辐射与热二维空穴的相互作用","authors":"V. Aleshkin, L. Vorobjev, D. Donetsky, T. Dumelow, A. Kastalsky, O. Kuznetsov, G. Mirjalili, L. K. Orlov, T. J. Parker, S. Farjami Shayesteh","doi":"10.1109/eqec.1996.561599","DOIUrl":null,"url":null,"abstract":"Summary form only given. The present work is a study of FIR emission from p-type GaAs-AlGaAs and Ge-GeSi structures caused by direct transitions of hot 2D holes between quantum-well subbands and modulation of FIR laser radiation under heating of 2D holes in quantum wells (QW). These phenomena were not observed before.","PeriodicalId":21999,"journal":{"name":"Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference","volume":"122 1","pages":"63-64"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Interaction of far-infrared radiation with hot two-dimensional holes in the quantum wells GaAs/Al/sub 1-x/Ga/sub x/As and Ge/Ge/sub 1-x/Si/sub x/\",\"authors\":\"V. Aleshkin, L. Vorobjev, D. Donetsky, T. Dumelow, A. Kastalsky, O. Kuznetsov, G. Mirjalili, L. K. Orlov, T. J. Parker, S. Farjami Shayesteh\",\"doi\":\"10.1109/eqec.1996.561599\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. The present work is a study of FIR emission from p-type GaAs-AlGaAs and Ge-GeSi structures caused by direct transitions of hot 2D holes between quantum-well subbands and modulation of FIR laser radiation under heating of 2D holes in quantum wells (QW). These phenomena were not observed before.\",\"PeriodicalId\":21999,\"journal\":{\"name\":\"Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference\",\"volume\":\"122 1\",\"pages\":\"63-64\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/eqec.1996.561599\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/eqec.1996.561599","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Interaction of far-infrared radiation with hot two-dimensional holes in the quantum wells GaAs/Al/sub 1-x/Ga/sub x/As and Ge/Ge/sub 1-x/Si/sub x/
Summary form only given. The present work is a study of FIR emission from p-type GaAs-AlGaAs and Ge-GeSi structures caused by direct transitions of hot 2D holes between quantum-well subbands and modulation of FIR laser radiation under heating of 2D holes in quantum wells (QW). These phenomena were not observed before.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
