Adjusted Adashi's Model of Exciton Bohr Parameter and New Proposed Models for Optical Properties of III-V Semiconductors

The energy gap of the semiconductor changes dramatically with its size. Consequently the determination of the correlation between the exciton Bohr parameter (aB), which is a size parameter, and the energy gap (Eg) is a main property for understanding the behaviour of the nanostructure properties. In this work, we propose the adjustment of Adashi’s model of exciton Bohr parameter with energy band gap to III-V family of semiconductors and propose new numerical models linking the exciton Bohr parameter (aB) to the optical properties such as the refractive index (n) and the dielectric constant (e). We found that our predictions will be more accurate for this family of semiconductors. Our objective is to propose some models which corresponding to bulk semiconductors and giving predictions to semiconductor nanostructures.