空间电荷限流法测量P3HT基光伏电池空穴迁移率

K. Kumary, M. Pratheek, T. A. Hameed, P. Predeep
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引用次数: 1

摘要

载流子的迁移率是表征任何半导体材料的关键参数之一,在有机半导体中也很重要。与无机半导体相比,有机半导体的迁移率仍然远远低于无机半导体,因此在即兴方向上的尝试具有巨大的意义。本文研究了两种不同阳极缓冲层(PEDOT:PSS和MoO3)在体异质结有机光伏电池中的正电荷载流子输运特性。采用空间电荷限流法计算了空穴迁移率,并对其进行了比较。用PEDOT:PSS和MoO3作为HTLs得到的值分别为1.043x10−4 cm2V−1S−1和1.357x10−4 cm2V−1S−1。可见,载流子迁移率越高的器件性能越好。
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Measurement of hole mobility in P3HT based photovoltaic cell using space charge limited current method
Mobility of carriers is one of the pivotal parameters characterizing any semiconducting material and it is important for organic semiconductors too. The mobility of organic semiconductors remains far less when compared to inorganic counterparts and hence attempts in the direction improvise it carries tremendous significance. This paper investigates the positive charge carriers transport properties in a bulk heterojunction organic photovoltaic cell using two different Anode Buffer Layers (PEDOT:PSS and MoO3). The method of Space Charge Limited Current (SCLC) is used to compute the hole mobilities and also the values are compared. The values obtained with PEDOT:PSS and MoO3 as HTLs are 1.043x10−4 cm2 V−1S−1 and 1.357x10−4 cm2V−1S−1 respectively. It is seen that the device with higher carrier mobility exhibits better performance.
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