恒定电场和磁场对半导体晶体结构畸变的x射线干涉研究

March 16 Pub Date : 1988-03-16 DOI:10.1002/PSSA.2211060106

E. Arshakyan, A. Aboyan, P. A. Bezirganyan

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引用次数: 3

摘要

实验研究了恒定电场和恒定磁场对硅半导体晶体的影响。结果表明，电场和磁场产生结构畸变，导致x射线干涉图像的变化，这取决于施加的场的大小。当电场强度和磁场感应强度达到一定值时，云纹图像消失。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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X-Ray Interferometric Investigations of Structural Distortions in Semiconductor Crystals Caused by Constant Electric and Magnetic Fields

The effect of constant electric and magnetic fields on the silicon semiconductor crystals is investigated experimentally. It is shown that electric and magnetic fields create structural distortions leading to changes in X-Ray interferometric pictures, which depend on the magnitude of the applied field. At certain values of the intensity of electric field and the induction of magnetic field, the Moire pictures disappear.

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March 16

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