两种SiGe 2级e波段功率放大器架构的比较

Tobias Tired, H. Sjöland, Göran Jönsson, J. Wernehag
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引用次数: 3

摘要

本文给出了两个采用0.18 μm SiGe技术、fr = 200 GHz的2级e波段功率放大器的仿真和测量结果。为了通过减轻基极-集电极电容的影响来增加功率增益,第一种设计采用2.7 V电源电压的差分级联编码拓扑。第二种设计使用差分共发射极级的电容交叉耦合,以前没有在毫米波SiGe PAs中演示过,并且电源电压仅为1.5 V。低电源电压是有利的,因为一个公共电源可以在收发器和PA之间共享。为了最大限度地提高功率增益和稳健性,两种设计都使用了基于变压器的级间匹配。级联码设计实现了92 GHz时16db的测量功率增益S21和17 GHz 3db带宽,模拟饱和输出功率Psat为17dbm,峰值PAE为16%。交叉耦合设计实现了93 GHz时10db的实测S21和16 GHz 3db带宽,模拟Psat为15dbm,峰值PAE为16%。比较两种放大器结构的测量和模拟结果,级联结构的拓扑结构更加鲁棒,而交叉耦合拓扑结构则受益于可编程的交叉耦合电容。
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Comparison of two SiGe 2-stage E-band power amplifier architectures
This paper presents simulation and measurement results for two 2-stage E-band power amplifiers implemented in 0.18 μm SiGe technology with fr = 200 GHz. To increase the power gain by mitigating the effect of the base-collector capacitance, the first design uses a differential cascode topology with a 2.7 V supply voltage. The second design instead uses capacitive cross-coupling of a differential common emitter stage, previously not demonstrated in mm-wave SiGe PAs, and has a supply voltage of only 1.5 V. Low supply voltage is advantageous since a common supply can then be shared between the transceiver and the PA. To maximize the power gain and robustness, both designs use a transformer based interstage matching. The cascode design achieves a measured power gain, S21, of 16 dB at 92 GHz with 17 GHz 3-dB bandwidth, and a simulated saturated output power, Psat, of 17 dBm with a 16% peak PAE. The cross-coupled design achieves a measured S21 of 10 dB at 93 GHz with 16 GHz 3-dB bandwidth, and a simulated Psat, of 15 dBm with 16% peak PAE. Comparing the measured and simulated results for the two amplifier architectures, the cascode topology is more robust, while the cross-coupled topology would benefit from a programmable cross-coupling capacitance.
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