{"title":"超薄砷化镓单结太阳能电池的辐射硬度增加","authors":"Jacob J. Becker, Ying-Shen Kuo, Yong-Hang Zhang","doi":"10.1109/PVSC.2014.6925281","DOIUrl":null,"url":null,"abstract":"The absorber-thickness dependent, relative efficiency losses for solar cells with a 300 nm, 1000 nm and 2000 nm thick absorber were found to be 20.5%, 26.8% and 28.6%, respectively, after exposure to 1 MeV electron radiation. Thinner solar cells exhibited smaller efficiency losses than thicker devices; a trend that correlates well with the theoretical prediction using a semi-analytical model.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"23 1","pages":"1839-1841"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Increased radiation hardness in ultra-thin GaAs single-junction solar cells\",\"authors\":\"Jacob J. Becker, Ying-Shen Kuo, Yong-Hang Zhang\",\"doi\":\"10.1109/PVSC.2014.6925281\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The absorber-thickness dependent, relative efficiency losses for solar cells with a 300 nm, 1000 nm and 2000 nm thick absorber were found to be 20.5%, 26.8% and 28.6%, respectively, after exposure to 1 MeV electron radiation. Thinner solar cells exhibited smaller efficiency losses than thicker devices; a trend that correlates well with the theoretical prediction using a semi-analytical model.\",\"PeriodicalId\":6649,\"journal\":{\"name\":\"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)\",\"volume\":\"23 1\",\"pages\":\"1839-1841\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2014.6925281\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2014.6925281","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Increased radiation hardness in ultra-thin GaAs single-junction solar cells
The absorber-thickness dependent, relative efficiency losses for solar cells with a 300 nm, 1000 nm and 2000 nm thick absorber were found to be 20.5%, 26.8% and 28.6%, respectively, after exposure to 1 MeV electron radiation. Thinner solar cells exhibited smaller efficiency losses than thicker devices; a trend that correlates well with the theoretical prediction using a semi-analytical model.