薄切矽箔晶体缺陷的热固化

A. Masolin, J. Vaes, F. Dross, J. Poortmans, R. Mertens
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引用次数: 6

摘要

SLIM-Cut方法[1]解决了光伏晶体硅最重要的挑战之一:薄至50微米的衬底的无切口晶圆。SLIM-Cut技术完全基于机械应力,它与低成本制造方法兼容:在硅片上施加应力场,使裂纹在给定深度平行于表面的硅衬底上传播。将顶部硅层与母衬底分离并加工成太阳能电池。
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Thermal curing of crystallographic defects on a slim-cut silicon foil
The SLIM-Cut method [1] addresses one of the most important challenges of crystalline-Si for photovoltaics: kerf-free wafering of substrates as thin as 50 microns. The SLIM-Cut technology is fully based on mechanical stress and it is compatible with low-cost fabrication methods: a stress field is applied to a silicon wafer so that a crack propagates in the silicon substrate parallel to the surface at a given depth. The top silicon layer is separated from the parent substrate and processed into a solar cell.
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