Yu Bao, Gang Shi, Lin Gao, Yanyan Zhang, Yingming Liu, P. Tian, Fuchun Xi, Wei Hu, Ying Gao, Zhenhua Cai, Baojun Zhao, Zhigang Yang, J. Leng, Haifeng Zhou, J. Fang
{"title":"28nm BEOL铜隙填充工艺研究","authors":"Yu Bao, Gang Shi, Lin Gao, Yanyan Zhang, Yingming Liu, P. Tian, Fuchun Xi, Wei Hu, Ying Gao, Zhenhua Cai, Baojun Zhao, Zhigang Yang, J. Leng, Haifeng Zhou, J. Fang","doi":"10.1109/CSTIC.2017.7919808","DOIUrl":null,"url":null,"abstract":"In this paper, the influence of Copper (Cu) barrier and seed process tuning on step coverage was analyzed. TEM images show relatively thinner barrier can improve the opening CD of a metal line structure hence improve the sidewall coverage of Cu seed. Cu Seed adopts the deposition/re-sputter method to improve the step coverage, and a higher ratio of re-sputter/deposition can increase the thickness of Cu seed on the sidewall. According to the post CMP surface defects scan results, the optimization of barrier Cu seed thickness can significantly reduce the copper void defects density.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"2 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The study of 28nm BEOL Cu gap-fill process\",\"authors\":\"Yu Bao, Gang Shi, Lin Gao, Yanyan Zhang, Yingming Liu, P. Tian, Fuchun Xi, Wei Hu, Ying Gao, Zhenhua Cai, Baojun Zhao, Zhigang Yang, J. Leng, Haifeng Zhou, J. Fang\",\"doi\":\"10.1109/CSTIC.2017.7919808\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the influence of Copper (Cu) barrier and seed process tuning on step coverage was analyzed. TEM images show relatively thinner barrier can improve the opening CD of a metal line structure hence improve the sidewall coverage of Cu seed. Cu Seed adopts the deposition/re-sputter method to improve the step coverage, and a higher ratio of re-sputter/deposition can increase the thickness of Cu seed on the sidewall. According to the post CMP surface defects scan results, the optimization of barrier Cu seed thickness can significantly reduce the copper void defects density.\",\"PeriodicalId\":6846,\"journal\":{\"name\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"2 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC.2017.7919808\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919808","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper, the influence of Copper (Cu) barrier and seed process tuning on step coverage was analyzed. TEM images show relatively thinner barrier can improve the opening CD of a metal line structure hence improve the sidewall coverage of Cu seed. Cu Seed adopts the deposition/re-sputter method to improve the step coverage, and a higher ratio of re-sputter/deposition can increase the thickness of Cu seed on the sidewall. According to the post CMP surface defects scan results, the optimization of barrier Cu seed thickness can significantly reduce the copper void defects density.
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