基于高电子迁移率晶体管的氢传感器，采用ITO作为传感层

2021 IEEE Sensors Pub Date : 2021-10-31 DOI:10.1109/SENSORS47087.2021.9639820

Md. Iktiham Bin Taher, Y. Halfaya, R. Alrammouz, M. Lazerges, A. Randi, T. Moudakir, N. Sama, Thomas Guermont, Nicolas Pelissier, T. Pichler, M. Piedevache, J. Pironon, S. Gautier

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引用次数: 1

摘要

以氧化铟锡(ITO)栅极为功能层，制备了基于AlGaN/GaN高电子迁移率晶体管(HEMTs)的氢气传感器。几个传感指标，如电流、灵敏度和响应时间的变化，证实了传感响应对气体浓度的依赖性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High electron mobility transistor-based hydrogen sensor using ITO as a sensing layer

Gas sensors based on AlGaN/GaN high-electron-mobility transistors (HEMTs) with indium tin oxide (ITO) gates as functional layers were fabricated to detect hydrogen gas. Several sensing metrics such as the changes in current, sensitivity, and response time confirmed the dependence of the sensing response on the gas concentration.

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2021 IEEE Sensors

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