Performance enhanced of MOS-structure silicon solar cell based on the integration of photovoltaic biasing source

High-performance MOS-structure silicon (Si) P/N-junction solar cell integrated with the photovoltaic-biasing source on the ceramic-substrate is demonstrated for the first time. The photovoltaic-biasing source was consisted of a series of small-area Si-solar-cells using die-bonding and wire-bonding integrated techniques and its output provides a photovoltaic voltage to bias the MOS-structure Si solar cell. The biasing voltage was changed from 0.55 V (one cell) to 2.75 V (five cells series connected). At photovoltaic biasing of 2.75 V, the short-circuit-current enhancement (ΔIsc) of 55.1% and conversion-efficiency enhancement (Δη) of 45.2% are obtained, compared to the MOS-structure Si solar cell with 0 V biasing.