用于亚10nm光刻的新型定向自组装嵌段共聚物的设计与合成

Jie Li, Xuemiao Li, H. Deng
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引用次数: 0

摘要

采用阴离子聚合法制备了一系列新型嵌段共聚物PS-b-PPDMA。小角x射线散射(SAXS)光谱和透射电子显微镜(TEM)图像显示,在温和退火条件下形成了半间距小于10 nm的片层或六边形结构。在100°C热退火下,装配条件快至5分钟或更短。最小片层间距为11.8 nm。这些嵌段共聚物显示出在10 nm以下及以上节点具有高固有分辨率的DSA材料的潜力。
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Design and synthesis of novel directed self-assembly block copolymers for sub-10 nm lithography application
A series of novel block copolymers, PS-b-PPDMA, were synthesized via anionic polymerization. Small-angle X-ray scattering (SAXS) spectra and Transmission electron microscope (TEM) images indicated lamella or hexagonal structures with a sub-10 nm half-pitch formed under mild thermal annealing condition. The assembly condition is as quick as 5 min or less at 100 °C thermal annealing. The smallest lamellar D spacing is 11.8 nm. These block copolymers show the potential as DSA material with high intrinsic resolution for sub-10 nm and beyond nodes.
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