一个0.13µm 64Mb多层导电金属氧化物存储器

2010 IEEE International Solid-State Circuits Conference - (ISSCC) Pub Date : 2010-03-18 DOI:10.1109/ISSCC.2010.5433945

C. Chevallier, C. Siau, S. Lim, Srivalli Namala, M. Matsuoka, B. Bateman, D. Rinerson

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引用次数: 89

摘要

随着扩展变得越来越困难，已经提出了许多技术来取代NAND闪存[1-2]。一个有前景的领域包括使用导电金属氧化物(CMOx™)技术的电阻式存储器，其中多个存储器层可以堆叠成[3]。早期的尝试是用不可重写的材料[4]。高密度、多物理层、非易失性、可重写存储器的关键概念已经在64Mb、130nm的测试芯片上开发出来。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 0.13µm 64Mb multi-layered conductive metal-oxide memory

A number of technologies have been proposed to replace NAND Flash as scaling becomes more difficult [1–2]. One promising area includes resistive memories using the conductive metal oxide (CMOx™) technology where multiple memory layers can be stacked [3]. Earlier attempts have been made with non-rewritable materials [4]. The key concepts for a very high density, multi physical layer nonvolatile, rewritable memory have been developed on a 64Mb, 130 nm test chip.

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2010 IEEE International Solid-State Circuits Conference - (ISSCC)

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