{"title":"一种基于耦合电感谐波阻抗调制器的28 ghz反f类功率放大器","authors":"S. Y. Mortazavi, Kwang-Jin Koh","doi":"10.1109/CICC.2015.7338364","DOIUrl":null,"url":null,"abstract":"This paper presents a 28 GHz class-F<sup>1</sup> power amplifier in 0.13-μm SiGe BiCMOS technology. The PA adopts a coupled-inductor based harmonic impedance modulator in order to terminate 2<sup>nd</sup> and 3<sup>rd</sup> harmonic load impedances appropriately for class-F<sup>1</sup> operation. The coupled coils essentially provide frequency-dependent inductance that is optimal to resonate out 2<sup>nd</sup> and 3<sup>rd</sup> harmonic reactive impedance. The PA achieve 40-42% PAE over 27.5 GHz to 29 GHz, peak 42% PAE at 28 GHz with 50 mW OP-1db power, one of the highest PAEs ever reported in silicon-based PAs. At 6-dB backoff output power, the PAE is as high as 20% Psat is 16.6 dBm. The PA occupies 0.55×0.96 mm<sup>2</sup>.","PeriodicalId":6665,"journal":{"name":"2015 IEEE Custom Integrated Circuits Conference (CICC)","volume":"75 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"A 28-GHz inverse class-F power amplifier with coupled-inductor based harmonic impedance modulator\",\"authors\":\"S. Y. Mortazavi, Kwang-Jin Koh\",\"doi\":\"10.1109/CICC.2015.7338364\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 28 GHz class-F<sup>1</sup> power amplifier in 0.13-μm SiGe BiCMOS technology. The PA adopts a coupled-inductor based harmonic impedance modulator in order to terminate 2<sup>nd</sup> and 3<sup>rd</sup> harmonic load impedances appropriately for class-F<sup>1</sup> operation. The coupled coils essentially provide frequency-dependent inductance that is optimal to resonate out 2<sup>nd</sup> and 3<sup>rd</sup> harmonic reactive impedance. The PA achieve 40-42% PAE over 27.5 GHz to 29 GHz, peak 42% PAE at 28 GHz with 50 mW OP-1db power, one of the highest PAEs ever reported in silicon-based PAs. At 6-dB backoff output power, the PAE is as high as 20% Psat is 16.6 dBm. The PA occupies 0.55×0.96 mm<sup>2</sup>.\",\"PeriodicalId\":6665,\"journal\":{\"name\":\"2015 IEEE Custom Integrated Circuits Conference (CICC)\",\"volume\":\"75 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Custom Integrated Circuits Conference (CICC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2015.7338364\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Custom Integrated Circuits Conference (CICC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2015.7338364","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 28-GHz inverse class-F power amplifier with coupled-inductor based harmonic impedance modulator
This paper presents a 28 GHz class-F1 power amplifier in 0.13-μm SiGe BiCMOS technology. The PA adopts a coupled-inductor based harmonic impedance modulator in order to terminate 2nd and 3rd harmonic load impedances appropriately for class-F1 operation. The coupled coils essentially provide frequency-dependent inductance that is optimal to resonate out 2nd and 3rd harmonic reactive impedance. The PA achieve 40-42% PAE over 27.5 GHz to 29 GHz, peak 42% PAE at 28 GHz with 50 mW OP-1db power, one of the highest PAEs ever reported in silicon-based PAs. At 6-dB backoff output power, the PAE is as high as 20% Psat is 16.6 dBm. The PA occupies 0.55×0.96 mm2.
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