高精度电流分流监视器,扩展输入共模电压范围

Pavel Brinzoi, Razvan Puccacu, Laurentiu Creocteanu
{"title":"高精度电流分流监视器,扩展输入共模电压范围","authors":"Pavel Brinzoi, Razvan Puccacu, Laurentiu Creocteanu","doi":"10.1109/SMICND.2014.6966436","DOIUrl":null,"url":null,"abstract":"This paper presents a design solution for a high precision current-shunt monitor allowing input common-mode levels from -0.3V to 30V, independent of the supply voltage. The maximum referred to input offset voltage is ±10μV, over the entire common-mode input range. The proposed configuration has a fixed gain of 200 and exhibits a maximum gain error of 0.1%. The supply voltage can vary between 2.6V and 30V. The circuit has been designed in a 0.25μm BCD technology with a die area of only 0.8mm2.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"107 1","pages":"203-206"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High precision current-shunt monitor with extended input common-mode voltage range\",\"authors\":\"Pavel Brinzoi, Razvan Puccacu, Laurentiu Creocteanu\",\"doi\":\"10.1109/SMICND.2014.6966436\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a design solution for a high precision current-shunt monitor allowing input common-mode levels from -0.3V to 30V, independent of the supply voltage. The maximum referred to input offset voltage is ±10μV, over the entire common-mode input range. The proposed configuration has a fixed gain of 200 and exhibits a maximum gain error of 0.1%. The supply voltage can vary between 2.6V and 30V. The circuit has been designed in a 0.25μm BCD technology with a die area of only 0.8mm2.\",\"PeriodicalId\":6616,\"journal\":{\"name\":\"2014 International Semiconductor Conference (CAS)\",\"volume\":\"107 1\",\"pages\":\"203-206\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2014.6966436\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2014.6966436","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文提出了一种高精度电流分流监视器的设计方案,该监视器允许输入共模电平从-0.3V到30V,与电源电压无关。在整个共模输入范围内,最大参考输入失调电压为±10μV。所提出的配置具有200的固定增益,并且显示出0.1%的最大增益误差。电源电压可在2.6V到30V之间变化。该电路采用0.25μm BCD工艺设计,芯片面积仅为0.8mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
High precision current-shunt monitor with extended input common-mode voltage range
This paper presents a design solution for a high precision current-shunt monitor allowing input common-mode levels from -0.3V to 30V, independent of the supply voltage. The maximum referred to input offset voltage is ±10μV, over the entire common-mode input range. The proposed configuration has a fixed gain of 200 and exhibits a maximum gain error of 0.1%. The supply voltage can vary between 2.6V and 30V. The circuit has been designed in a 0.25μm BCD technology with a die area of only 0.8mm2.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Fabrication of spiral phase plates for optical vortices Graphene as a tunable resistor Immobilization of Alkaline phosphatase on biopolymeric support Effect of thermal annealing in vacuum on the structural and optical properties of Sb2S3 thin films Characterization and modeling of self-heating in DMOS transistors
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1