石墨烯层光晶体结构光学光谱

С. В. Елисеева, Дмитрий Игоревич Семенцов
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摘要

研究了含石墨烯光谱光子晶体结构随石墨烯化学势(μ)变化的变化规律。在结构周期中,一层为含石墨烯的周期介质(SiO2/Gr)n,第二层假定为纯硅。在未激发石墨烯(μ = 0)的情况下,结构中的吸收超过了光子带隙外频率的反射和透射。在这些区域内,大部分入射辐射被反射,根本没有透射。在带隙外,随着μ的增大,低频区的吸收减小,透射率增加,μ越大。在带隙内具有反转缺陷的结构中,缺陷模式发生抑制或显著重排。
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Оптические спектры фотонно-кристаллической структуры со слоями графена
The transformation of the graphene-containing optical spectra photonic-crystal structure with a change in the chemical potential (μ) of graphene is studied. In the period of the structure, one layer is a graphene-containing periodic medium (SiO2/Gr)n , and the second layer is assumed to be made of pure silicon. In the case of unexcited graphene (μ = 0), the absorption in the structure exceeds the reflection and transmission for frequencies outside the photonic band gaps. Within these zones, most of the incident radiation is reflected, and there is no transmission at all. As μ increases outside the band gaps, the absorption decreases in the low-frequency region, and the transmission increases the stronger, the greater μ. In a structure with an inversion defect inside the band gaps, either suppression or significant rearrangement of the defect mode takes place.
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