{"title":"65纳米CMOS中0.56 THz和1.06 THz自混合晶体管的性能比较","authors":"Ariane De Vroede, P. Reynaert","doi":"10.1109/IRMMW-THz50926.2021.9567591","DOIUrl":null,"url":null,"abstract":"The frequency scalability of self-mixing transistors with zero drain bias for THz power detection is demonstrated. Measurements of individual patch-coupled detectors tuned at 0.56 and 1.06 THz indicate no sensitivity degradation when moving towards higher frequencies.","PeriodicalId":6852,"journal":{"name":"2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)","volume":"19 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Performance Comparison of Self-Mixing Transistors at 0.56 and 1.06 THz in 65nm CMOS\",\"authors\":\"Ariane De Vroede, P. Reynaert\",\"doi\":\"10.1109/IRMMW-THz50926.2021.9567591\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The frequency scalability of self-mixing transistors with zero drain bias for THz power detection is demonstrated. Measurements of individual patch-coupled detectors tuned at 0.56 and 1.06 THz indicate no sensitivity degradation when moving towards higher frequencies.\",\"PeriodicalId\":6852,\"journal\":{\"name\":\"2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)\",\"volume\":\"19 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-08-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRMMW-THz50926.2021.9567591\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRMMW-THz50926.2021.9567591","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance Comparison of Self-Mixing Transistors at 0.56 and 1.06 THz in 65nm CMOS
The frequency scalability of self-mixing transistors with zero drain bias for THz power detection is demonstrated. Measurements of individual patch-coupled detectors tuned at 0.56 and 1.06 THz indicate no sensitivity degradation when moving towards higher frequencies.
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