恶劣环境下铜、金、银和PCC焊丝的可靠性

P. Lall, Shantanu Deshpande, L. Nguyen
{"title":"恶劣环境下铜、金、银和PCC焊丝的可靠性","authors":"P. Lall, Shantanu Deshpande, L. Nguyen","doi":"10.1109/ECTC.2018.00113","DOIUrl":null,"url":null,"abstract":"Wire bonding is popular first-level interconnect method used in the semiconductor device packaging. Gold (Ag) wire is often used in high-reliability applications. Typical wire diameters vary between 0.8mil to 2mil. Recent increases in the gold-price have motivated the industry to search for alternate materials candidates for use in wirebonding. Three of the leading candidates are Silver (Ag), Copper (Cu), and Palladium Coated Copper (PCC). The new material candidates are inexpensive in comparison with gold and may have better electrical, and thermal properties, which is advantageous for fine pitch-high density electronics. The transition, however, comes along with few trade-offs such as narrow process window, higher wire-hardness, increased propensity for chip-cratering, lack of reliability knowledge base of when deployed in harsh environment applications. Relationship between mechanical degradation of the wirebond and the change in electric response needs to be established for better understanding of the failure modes and their respective mechanisms. Understanding the physics of damage progression may provide insights into the process parameters for manufacture of more robust interconnects. In this paper, a detailed study of the electrical and mechanical degradation of wirebonds under high temperature exposure is presented. Four wirebond candidates (Au, Ag, Cu and PCC) bonded onto Aluminum (Al) pad were subjected to high temperature storage life until failure to study the degradation of the bond-wire interface. Same package architecture and electronic molding compound (EMC) were used for all four candidates. Detailed analysis of intermetallic (IMC) phase evolution is presented along with quantification of the phases and their evolution over time. Ball shear strength was measured after decapsulation. Measurements of shear strength, shear failure modes, and IMC composition have been correlated with the change in the electrical response. Change in shear strength and different shear failure modes for different wirebond systems are discussed in the paper.","PeriodicalId":6555,"journal":{"name":"2018 IEEE 68th Electronic Components and Technology Conference (ECTC)","volume":"401 1","pages":"724-734"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":"{\"title\":\"Reliability of Copper, Gold, Silver, and PCC Wirebonds Subjected to Harsh Environment\",\"authors\":\"P. Lall, Shantanu Deshpande, L. Nguyen\",\"doi\":\"10.1109/ECTC.2018.00113\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Wire bonding is popular first-level interconnect method used in the semiconductor device packaging. Gold (Ag) wire is often used in high-reliability applications. Typical wire diameters vary between 0.8mil to 2mil. Recent increases in the gold-price have motivated the industry to search for alternate materials candidates for use in wirebonding. Three of the leading candidates are Silver (Ag), Copper (Cu), and Palladium Coated Copper (PCC). The new material candidates are inexpensive in comparison with gold and may have better electrical, and thermal properties, which is advantageous for fine pitch-high density electronics. The transition, however, comes along with few trade-offs such as narrow process window, higher wire-hardness, increased propensity for chip-cratering, lack of reliability knowledge base of when deployed in harsh environment applications. Relationship between mechanical degradation of the wirebond and the change in electric response needs to be established for better understanding of the failure modes and their respective mechanisms. Understanding the physics of damage progression may provide insights into the process parameters for manufacture of more robust interconnects. In this paper, a detailed study of the electrical and mechanical degradation of wirebonds under high temperature exposure is presented. Four wirebond candidates (Au, Ag, Cu and PCC) bonded onto Aluminum (Al) pad were subjected to high temperature storage life until failure to study the degradation of the bond-wire interface. Same package architecture and electronic molding compound (EMC) were used for all four candidates. Detailed analysis of intermetallic (IMC) phase evolution is presented along with quantification of the phases and their evolution over time. Ball shear strength was measured after decapsulation. Measurements of shear strength, shear failure modes, and IMC composition have been correlated with the change in the electrical response. Change in shear strength and different shear failure modes for different wirebond systems are discussed in the paper.\",\"PeriodicalId\":6555,\"journal\":{\"name\":\"2018 IEEE 68th Electronic Components and Technology Conference (ECTC)\",\"volume\":\"401 1\",\"pages\":\"724-734\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"27\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 68th Electronic Components and Technology Conference (ECTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC.2018.00113\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 68th Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2018.00113","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 27

摘要

线键合是半导体器件封装中常用的一级互连方法。金(Ag)线常用于高可靠性应用。典型的线径在0.8mil到2mil之间变化。最近黄金价格的上涨促使该行业寻找用于线键合的替代材料。三种主要的候选材料是银(Ag)、铜(Cu)和钯包覆铜(PCC)。与金相比,新的候选材料价格低廉,并且可能具有更好的电学和热性能,这对细间距高密度电子器件是有利的。然而,这种转变也带来了一些缺点,如工艺窗口窄、线材硬度高、芯片磨损倾向增加、在恶劣环境应用中部署时缺乏可靠性知识基础。为了更好地理解失效模式及其各自的机制,需要建立线键力学退化与电响应变化之间的关系。了解损伤进展的物理原理可以为制造更坚固的互连提供更深入的工艺参数。在本文中,详细研究了高温暴露下线键的电气和机械退化。将四种候选焊丝(Au, Ag, Cu和PCC)结合到铝(Al)衬垫上,进行高温储存寿命测试,直到研究焊丝界面的降解失效。四种候选器件均采用相同的封装结构和电子成型化合物(EMC)。详细分析了金属间化合物(IMC)的相演变,并对相及其随时间的演变进行了量化。脱囊后测定球抗剪强度。剪切强度、剪切破坏模式和IMC成分的测量与电响应的变化有关。讨论了不同焊丝粘结体系的抗剪强度变化和不同的剪切破坏模式。
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Reliability of Copper, Gold, Silver, and PCC Wirebonds Subjected to Harsh Environment
Wire bonding is popular first-level interconnect method used in the semiconductor device packaging. Gold (Ag) wire is often used in high-reliability applications. Typical wire diameters vary between 0.8mil to 2mil. Recent increases in the gold-price have motivated the industry to search for alternate materials candidates for use in wirebonding. Three of the leading candidates are Silver (Ag), Copper (Cu), and Palladium Coated Copper (PCC). The new material candidates are inexpensive in comparison with gold and may have better electrical, and thermal properties, which is advantageous for fine pitch-high density electronics. The transition, however, comes along with few trade-offs such as narrow process window, higher wire-hardness, increased propensity for chip-cratering, lack of reliability knowledge base of when deployed in harsh environment applications. Relationship between mechanical degradation of the wirebond and the change in electric response needs to be established for better understanding of the failure modes and their respective mechanisms. Understanding the physics of damage progression may provide insights into the process parameters for manufacture of more robust interconnects. In this paper, a detailed study of the electrical and mechanical degradation of wirebonds under high temperature exposure is presented. Four wirebond candidates (Au, Ag, Cu and PCC) bonded onto Aluminum (Al) pad were subjected to high temperature storage life until failure to study the degradation of the bond-wire interface. Same package architecture and electronic molding compound (EMC) were used for all four candidates. Detailed analysis of intermetallic (IMC) phase evolution is presented along with quantification of the phases and their evolution over time. Ball shear strength was measured after decapsulation. Measurements of shear strength, shear failure modes, and IMC composition have been correlated with the change in the electrical response. Change in shear strength and different shear failure modes for different wirebond systems are discussed in the paper.
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