具有14b亚阈值ADC的背照全局快门CMOS图像传感器

M. Sakakibara, Koji Ogawa, Shin Sakai, Yasuhisa Tochigi, K. Honda, H. Kikuchi, T. Wada, Y. Kamikubo, T. Miura, M. Nakamizo, Naoki Jyo, Ryo Hayashibara, Y. Furukawa, Shinya Miyata, Satoshi Yamamoto, Y. Ota, H. Takahashi, T. Taura, Y. Oike, K. Tatani, T. Nagano, T. Ezaki, T. Hirayama
{"title":"具有14b亚阈值ADC的背照全局快门CMOS图像传感器","authors":"M. Sakakibara, Koji Ogawa, Shin Sakai, Yasuhisa Tochigi, K. Honda, H. Kikuchi, T. Wada, Y. Kamikubo, T. Miura, M. Nakamizo, Naoki Jyo, Ryo Hayashibara, Y. Furukawa, Shinya Miyata, Satoshi Yamamoto, Y. Ota, H. Takahashi, T. Taura, Y. Oike, K. Tatani, T. Nagano, T. Ezaki, T. Hirayama","doi":"10.1109/ISSCC.2018.8310193","DOIUrl":null,"url":null,"abstract":"Rolling-shutter CMOS image sensors (CISs) are widely used [1,2]. However, the distortion of moving subjects remains an unresolved problem, regardless of the speed at which these sensors are operated. It has been reported that by adopting in-pixel analog memory (MEM) in pixels, a global shutter (GS) can be achieved by saving all pixels simultaneously as stored charges [3,4]. However, as signals from a storage unit are read in a column-wise sequence, a light-shielding structure is required for the MEM to suppress the influence of parasitic light during the reading period. Pixel-parallel ADCs have been reported as methods of implementing GS on a circuit [5,6]. However, these techniques have not been successful in operations on megapixels because they do not address issues such as the timing constraint for reading and writing a digital signal to and from an ADC in a pixel owing to increase in the number of pixels and the increase in the total power consumption of massively parallel comparators (CMs).","PeriodicalId":6617,"journal":{"name":"2018 IEEE International Solid - State Circuits Conference - (ISSCC)","volume":"1 1","pages":"80-82"},"PeriodicalIF":0.0000,"publicationDate":"2018-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"41","resultStr":"{\"title\":\"A back-illuminated global-shutter CMOS image sensor with pixel-parallel 14b subthreshold ADC\",\"authors\":\"M. Sakakibara, Koji Ogawa, Shin Sakai, Yasuhisa Tochigi, K. Honda, H. Kikuchi, T. Wada, Y. Kamikubo, T. Miura, M. Nakamizo, Naoki Jyo, Ryo Hayashibara, Y. Furukawa, Shinya Miyata, Satoshi Yamamoto, Y. Ota, H. Takahashi, T. Taura, Y. Oike, K. Tatani, T. Nagano, T. Ezaki, T. Hirayama\",\"doi\":\"10.1109/ISSCC.2018.8310193\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Rolling-shutter CMOS image sensors (CISs) are widely used [1,2]. However, the distortion of moving subjects remains an unresolved problem, regardless of the speed at which these sensors are operated. It has been reported that by adopting in-pixel analog memory (MEM) in pixels, a global shutter (GS) can be achieved by saving all pixels simultaneously as stored charges [3,4]. However, as signals from a storage unit are read in a column-wise sequence, a light-shielding structure is required for the MEM to suppress the influence of parasitic light during the reading period. Pixel-parallel ADCs have been reported as methods of implementing GS on a circuit [5,6]. However, these techniques have not been successful in operations on megapixels because they do not address issues such as the timing constraint for reading and writing a digital signal to and from an ADC in a pixel owing to increase in the number of pixels and the increase in the total power consumption of massively parallel comparators (CMs).\",\"PeriodicalId\":6617,\"journal\":{\"name\":\"2018 IEEE International Solid - State Circuits Conference - (ISSCC)\",\"volume\":\"1 1\",\"pages\":\"80-82\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"41\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Solid - State Circuits Conference - (ISSCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2018.8310193\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Solid - State Circuits Conference - (ISSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2018.8310193","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 41

摘要

滚动快门CMOS图像传感器(CISs)应用广泛[1,2]。然而,无论这些传感器的运行速度如何,移动物体的变形仍然是一个未解决的问题。有报道称,通过在像素中采用像素内模拟存储器(MEM),可以通过同时将所有像素保存为存储电荷来实现全局快门(GS)[3,4]。然而,由于来自存储单元的信号是按列顺序读取的,因此MEM需要一个遮光结构来抑制读取期间寄生光的影响。像素并行adc已被报道为在电路上实现GS的方法[5,6]。然而,这些技术并没有在百万像素的操作中取得成功,因为它们没有解决诸如由于像素数量的增加和大规模并行比较器(CMs)总功耗的增加而在像素中从ADC读写数字信号的时间限制等问题。
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A back-illuminated global-shutter CMOS image sensor with pixel-parallel 14b subthreshold ADC
Rolling-shutter CMOS image sensors (CISs) are widely used [1,2]. However, the distortion of moving subjects remains an unresolved problem, regardless of the speed at which these sensors are operated. It has been reported that by adopting in-pixel analog memory (MEM) in pixels, a global shutter (GS) can be achieved by saving all pixels simultaneously as stored charges [3,4]. However, as signals from a storage unit are read in a column-wise sequence, a light-shielding structure is required for the MEM to suppress the influence of parasitic light during the reading period. Pixel-parallel ADCs have been reported as methods of implementing GS on a circuit [5,6]. However, these techniques have not been successful in operations on megapixels because they do not address issues such as the timing constraint for reading and writing a digital signal to and from an ADC in a pixel owing to increase in the number of pixels and the increase in the total power consumption of massively parallel comparators (CMs).
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