用共聚焦缺陷光谱研究极化铌酸锂波导器件

V. Dierolf, C. Sandmann
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引用次数: 0

摘要

Dierolfnrid Chr。利利大学。基于周期性极化LiNbO (PPLN)的非线性光源因其低阈值、易于操作和宽调谐范围而受到广泛关注。特别是,它们的集成光学版本,由于光在长相互作用长度上的限制,实现了非常高的转换效率。为了优化这些集成光学器件,必须精确地设计ti轮廓和畴结构,并控制相互作用的影响。为了实现这一目标,我们开发了一种新的表征工具,该工具基于表征良好的“设计缺陷”的发光。: E ?’),作为对当地环境的探测。我们将这一概念应用于PPLN波导器件的两个组件。(1)域约束和域壁的表征。结果表明,畴反转过程,尤其是矫顽场,受到内源缺陷和外源缺陷存在的强烈影响。我们通过解决相反的问题来研究这种效应:畴反转如何影响本征缺陷和掺杂?对三价稀土离子(E?和Yb'7在相同的和化学计量的LiNbO中,我们发现缺陷发光发生了剧烈的变化。基于对这些变化的详细分析,使用早期对缺陷系统的广泛研究[I];我们得出结论,缺陷重构发生了。显然,在所需要的电荷补偿器中,有些在室温下不会根据自发极化矢量的反向方向重新定位,而另一些则会。此外,我们能够探测到离子所经历的本征电场的变化。另一方面,我们在自制的共聚焦荧光显微镜中使用发射变化进行非破坏性3d域成像(图1)。在该技术中,我们对样品进行激发激光扫描,并测量相应的发射光谱。对光谱矩的评估使我们能够获得高对比度和高空间分辨率(<500nm)的图像域。该方法可以在原位应用,允许精确控制畴结构和时间分辨的畴反演研究。例如,我们正在研究畴壁的空间范围和动态。我们特别关注缺陷重排发生在哪个阶段的问题。“E。uOnrnlnS rnngea ' y cOn~Oc*'荧光显微镜。
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Study of poled lithium niobate waveguide devices by confocal defect spectroscopy
V, Dierolfnrid Chr. Snridnranri Leliigh Universifq., Physics Depnminit and Center for Opticnl Technologies, Bethlehem, PA 18015 USA Nonlinear light sources based on periodically poled LiNbO, (PPLN) have gained a great deal of attention due to low thresholds, ease of operation and wide tuning range. In particular, the integrated optical versions of them, achieve, due to the confinement of light over long interaction lengths, very high conversion efficiencies. In order to optimize these integrated optical devices, both the Ti-profile and the domain structure have to he engineered precisely and effects of interaction have to be under control. To achieve this goal, we developed a novel characterization tool based on the luminescence of well characterized "designer defect"(e.g.: E?' ) that we use as probes for the local environment. We applied this concept to the two components of a PPLN waveguide device. ( I ) Characrerizaation ofdomain strirctiires nnd domain walls. It has been shown that the domain inversion process, most notably the coercive field, is strongly influenced by the presence of intrinsic and extrinsic defects. We investigated this effect by addressing the reverse question: How does domain inversion influence the intrinsic defects and dopants? Performing optical spectroscopy with high resolution (both spectrally and spatially) on trivalent rare earth ions (E?' and Yb'7 in congruent and stoichiometric LiNbO, we find drastic changes in the defect luminescence. Based on a detailed analysis of these changes, using earlier extensive studies of the defect system [ I ] ; we conclude that a defect reconfiguration takes place. Obviously, some o f the required charge compensators do not reposition themselves according to the reversed orientation of the spontaneous polarization vector at room temperature, while others do. Furthermore, we were able to detect a change in the intrinsic electric field experienced by the ion. On the other hand, we use the emission changes for non-destructive 3D-domain imaging (Fig. I ) in a home-built confocal fluorescence microscope. For this technique, we scan the excitation laser over the sample and measure the corresponding emission spectra. Evaluation of the moments of the spectra enables us to image domains with high contrast and high spatial resolution (<500nm). This method can be employed in situ, allowing precise control of the domain structures and time resolved investigations of domain inversion. For instance, we are studying the spatial extent and dynamics of domain walls. Especially, we focus-on the question at which stage the defect rearrangement occurs. "E. '' uOnrnlnS rrnngea ' y cOn~Oc*' fluorescence microscope.
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