Song-Ho Choi, K. Jeong, Jinhan Choi, Kyong-Wan Koo, T. Cho, H. Chun
{"title":"ULSI器件中硅原生氧化物的去除研究","authors":"Song-Ho Choi, K. Jeong, Jinhan Choi, Kyong-Wan Koo, T. Cho, H. Chun","doi":"10.1109/KORUS.2000.866118","DOIUrl":null,"url":null,"abstract":"In UV-excited F/sub 2/+H/sub 2/ dry cleaning, the etching mechanism and selective etching of silicon native oxide were investigated using PSG, BSG, TEOS and thermal oxide film on silicon wafers. Also, the removal of silicon native oxide in contact holes after UV-excited F/sub 2/+H/sub 2/ dry cleaning, was defined by confirming the reduction of Kelvin resistance.","PeriodicalId":20531,"journal":{"name":"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A study on the removal of silicon native oxide for ULSI devices\",\"authors\":\"Song-Ho Choi, K. Jeong, Jinhan Choi, Kyong-Wan Koo, T. Cho, H. Chun\",\"doi\":\"10.1109/KORUS.2000.866118\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In UV-excited F/sub 2/+H/sub 2/ dry cleaning, the etching mechanism and selective etching of silicon native oxide were investigated using PSG, BSG, TEOS and thermal oxide film on silicon wafers. Also, the removal of silicon native oxide in contact holes after UV-excited F/sub 2/+H/sub 2/ dry cleaning, was defined by confirming the reduction of Kelvin resistance.\",\"PeriodicalId\":20531,\"journal\":{\"name\":\"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/KORUS.2000.866118\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/KORUS.2000.866118","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A study on the removal of silicon native oxide for ULSI devices
In UV-excited F/sub 2/+H/sub 2/ dry cleaning, the etching mechanism and selective etching of silicon native oxide were investigated using PSG, BSG, TEOS and thermal oxide film on silicon wafers. Also, the removal of silicon native oxide in contact holes after UV-excited F/sub 2/+H/sub 2/ dry cleaning, was defined by confirming the reduction of Kelvin resistance.
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