高-$k_{t}{}^{2}$可开关铁电Al0.7Sc0.3N薄膜体声谐振器

Jialin Wang, Mingyo Park, S. Mertin, T. Pensala, F. Ayazi, A. Ansari
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引用次数: 6

摘要

这项工作证明了具有~ 30% $\text{Sc}/(\text{Al}+\text{Sc})$比率的AlScN薄膜体声谐振器(FBAR)的滞后行为和温度特性。在~ 3 GHz工作时,制造的FBAR显示出创纪录的高效机电耦合($k_{t}{}}^{2}$)为18%,机械质量因子($Q_{m}$)为328。使用峰值电压为- 350 V的三角波信号,在900 nm厚的Al0.7Sc0.3N薄膜上以1khz施加6秒,FBAR的极化可以从n极性切换到al极性。结果表明,AlScN薄膜的极化开关不仅改变了压电系数(e33)的极性,而且改变了金属-铁电-金属(MFM)堆叠的串联电阻,从而实现了FBAR的有效“开关”。研究了可切换FBAR在4个周期的极化开关后,在高达600 K的高温下的频率响应。
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A High-$k_{t}{}^{2}$ Switchable Ferroelectric Al0.7Sc0.3N Film Bulk Acoustic Resonator
This work demonstrates the hysteresis behavior and temperature characterization of an AlScN Film bulk acoustic resonator (FBAR) with ∼30% $\text{Sc}/(\text{Al}+\text{Sc})$ ratio. Operating at ∼3 GHz, the as-fabricated FBAR exhibits a record high effective electromechanical coupling ($k_{t}{}^{2}$) of 18% with a mechanical quality factor ($Q_{m}$) of 328. The polarization of the FBAR can be switched from N-polar to Al-polar by using a triangular-wave signal with a peak voltage of −350 V, applied for 6 seconds at 1 kHz across a 900 nm-thick Al0.7Sc0.3N film. It is shown that the polarization switching of AlScN film not only changes the polarity of the piezoelectric coefficient (e33), but also changes the series resistance of the metal-ferroelectric-metal (MFM) stack and leads to an effective “switching” of the FBAR. The frequency response of the switchable FBAR is investigated after polarization switching during 4 cycles and at elevated temperatures up to 600 K.
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