M. Pereira, J. Vaz, C. Leme, J. Sousa, J. C. Freire
{"title":"一款超低功耗低中频GFSK解调器,适用于蓝牙- le应用","authors":"M. Pereira, J. Vaz, C. Leme, J. Sousa, J. C. Freire","doi":"10.1109/ISCAS.2015.7168861","DOIUrl":null,"url":null,"abstract":"This paper presents a digital low-IF Gaussian frequency-shift keying (GFSK) demodulator. The demodulator is based on a phase-shift quadrature discriminator. A preamble detector controls the sequencing of the blocks operation to minimize power consumption. An IF input signal of 1 MHz is used, the same of the data rate, hence, allowing a low-power receiver implementation. The implementation is fully digital with a silicon area of 0.06 mm2 in 130 nm process. Simulations show a state-of-art current consumption of about 143 μA from a single 1.2 V supply voltage. The proposed demodulator requires a SNR of 15 dB for a BER of 0.1 % for up to ± 200 kHz frequency offset variation.","PeriodicalId":91083,"journal":{"name":"IEEE International Symposium on Circuits and Systems proceedings. IEEE International Symposium on Circuits and Systems","volume":"43 1","pages":"1226-1229"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"An ultra-low power low-IF GFSK demodulator for Bluetooth-LE applications\",\"authors\":\"M. Pereira, J. Vaz, C. Leme, J. Sousa, J. C. Freire\",\"doi\":\"10.1109/ISCAS.2015.7168861\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a digital low-IF Gaussian frequency-shift keying (GFSK) demodulator. The demodulator is based on a phase-shift quadrature discriminator. A preamble detector controls the sequencing of the blocks operation to minimize power consumption. An IF input signal of 1 MHz is used, the same of the data rate, hence, allowing a low-power receiver implementation. The implementation is fully digital with a silicon area of 0.06 mm2 in 130 nm process. Simulations show a state-of-art current consumption of about 143 μA from a single 1.2 V supply voltage. The proposed demodulator requires a SNR of 15 dB for a BER of 0.1 % for up to ± 200 kHz frequency offset variation.\",\"PeriodicalId\":91083,\"journal\":{\"name\":\"IEEE International Symposium on Circuits and Systems proceedings. IEEE International Symposium on Circuits and Systems\",\"volume\":\"43 1\",\"pages\":\"1226-1229\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Symposium on Circuits and Systems proceedings. IEEE International Symposium on Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCAS.2015.7168861\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Symposium on Circuits and Systems proceedings. IEEE International Symposium on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCAS.2015.7168861","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An ultra-low power low-IF GFSK demodulator for Bluetooth-LE applications
This paper presents a digital low-IF Gaussian frequency-shift keying (GFSK) demodulator. The demodulator is based on a phase-shift quadrature discriminator. A preamble detector controls the sequencing of the blocks operation to minimize power consumption. An IF input signal of 1 MHz is used, the same of the data rate, hence, allowing a low-power receiver implementation. The implementation is fully digital with a silicon area of 0.06 mm2 in 130 nm process. Simulations show a state-of-art current consumption of about 143 μA from a single 1.2 V supply voltage. The proposed demodulator requires a SNR of 15 dB for a BER of 0.1 % for up to ± 200 kHz frequency offset variation.