{"title":"单芯片SiGe BiCMOS收发器和SiGe功率放大器，用于5.8 GHz WDCT应用","authors":"R. Reimann, G. Krimmer, W. Bischof, S. Gerlach","doi":"10.1109/MWSYM.2005.1516715","DOIUrl":null,"url":null,"abstract":"A fully integrated RF transceiver and power amplifier for 5.8 GHz frequency band operation are presented. The transceiver is composed of a low noise amplifier, low-IF receiver, digital demodulator, fully integrated VCO, PLL, transmitter and 2 dBm output amplifiers. For typical applications in transmit mode, a subsequent 25 dBm power amplifier (PA) is integrated. The PA and the transceiver are fabricated using Atmel's SiGe and SiGe BiCMOS technology, respectively. The transceiver and PA operate from a single lithium battery, avoiding mechanical tuning. The number of external components is drastically reduced compared to previous solutions.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A single chip SiGe BiCMOS transceiver and SiGe power amplifier for 5.8 GHz WDCT applications\",\"authors\":\"R. Reimann, G. Krimmer, W. Bischof, S. Gerlach\",\"doi\":\"10.1109/MWSYM.2005.1516715\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully integrated RF transceiver and power amplifier for 5.8 GHz frequency band operation are presented. The transceiver is composed of a low noise amplifier, low-IF receiver, digital demodulator, fully integrated VCO, PLL, transmitter and 2 dBm output amplifiers. For typical applications in transmit mode, a subsequent 25 dBm power amplifier (PA) is integrated. The PA and the transceiver are fabricated using Atmel's SiGe and SiGe BiCMOS technology, respectively. The transceiver and PA operate from a single lithium battery, avoiding mechanical tuning. The number of external components is drastically reduced compared to previous solutions.\",\"PeriodicalId\":13133,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2005.1516715\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2005.1516715","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A single chip SiGe BiCMOS transceiver and SiGe power amplifier for 5.8 GHz WDCT applications
A fully integrated RF transceiver and power amplifier for 5.8 GHz frequency band operation are presented. The transceiver is composed of a low noise amplifier, low-IF receiver, digital demodulator, fully integrated VCO, PLL, transmitter and 2 dBm output amplifiers. For typical applications in transmit mode, a subsequent 25 dBm power amplifier (PA) is integrated. The PA and the transceiver are fabricated using Atmel's SiGe and SiGe BiCMOS technology, respectively. The transceiver and PA operate from a single lithium battery, avoiding mechanical tuning. The number of external components is drastically reduced compared to previous solutions.
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