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引用次数: 0
摘要
在这项研究中，我们研究了电流反射电路特性与16纳米多栅极MOSFET的通道-鳍长比(AR =鳍高/鳍宽)的关系，以及器件的固有参数波动，包括金属栅功函数波动(WKF)、随机掺杂波动(RDF)、工艺变化效应(PVE)和氧化物厚度波动(OTF)。对于n型和p型电流镜像电路，由于驱动电流的提高，器件的高AR可以抑制由RDF和WKF分别主导的波动。对于n型和p型电流镜像电路，FinFET (AR = 2)中以RDF和WKF为主的IOUT波动分别比准平面(AR = 0.5)器件小2.8倍和2.5倍。
Electrical characteristic variability in 16-nm multi-gate MOSFET current mirror circuit
In this study, we examine the dependency of current mirror circuit characteristics on channel-fin aspect-ratio (AR = fin height / the fin width) of 16-nm multi-gate MOSFET and device's intrinsic parameter fluctuation including metal-gate work-function fluctuation (WKF), random-dopant fluctuation (RDF), process-variation effect (PVE), and oxide-thickness fluctuation (OTF). For n- and p-type current mirror circuits, the fluctuations dominated by RDF and WKF, respectively, could be suppressed by high AR of devices due to improved driving current. For n- and p-type current mirror circuits, IOUT fluctuation dominated by RDF and WKF in FinFET (AR = 2) is 2.8 and 2.5 times smaller than that of quasi-planar (AR = 0.5) device, respectively.
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