R. Venkatasubramanian, M.L. Timmons, T.S. Colpitts, J.S. Hills
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Advances in the development of an AlGaAs/GaAs cascade solar cell using a patterned germanium tunnel interconnect
In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al0.37Ga0.63As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth of germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed.
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