电流对Cu/熔融Sn/Cu互连体系中Cu-Sn金属间化合物晶粒取向的影响

Jiayun Feng, Baolei Liu, Yanhong Tian, B. Zhang
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引用次数: 2

摘要

本文在260℃下,在电流密度为1.0 × 102A/cm2的Cu/熔融Sn/Cu互连体系中,研究了Cu6Sn5金属间化合物的界面反应和晶粒取向。外加电流在固液电迁移作用下显著加速了阳极侧Cu6Sn5的生长速率,而对Cu3Sn的生长速率无明显影响。生长动力学计算结果表明,随着电流的通过,Cu6Sn5化合物在阴极处的生长由反应过程决定,而Cu3Sn的生长受扩散控制。此外,电流对cu -熔融Sn-Cu体系中Cu6Sn5相的取向有较大影响。Cu6Sn5相中存在较强的[0001]方向织构,与电子流方向平行。这一结果表明,电子沿某些特定的方向运动,并且被晶格散射最少。新形成的Cu-Sn化合物在这些特定的生长方向上定向,以促进电子流动。
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Influence of electric current on the grain orientation of Cu-Sn intermetallic compounds in Cu/molten Sn/Cu interconnection system
In this paper, the interfacial reaction and the grain orientation of Cu6Sn5 intermetallic compound was investigated in Cu/molten Sn/Cu interconnection system under the current density of 1.0 × 102A/cm2 at 260 °C. The imposed electric current significantly accelerated the Cu6Sn5 growth rate at anode side under the effect of solid-liquid electromigration, while it has no obvious effect on the Cu3Sn growth rate. The growth kinetics calculation results showed that with the passage of electric current, the growth of Cu6Sn5 compound at the cathode was determined by reaction process, while the Cu3Sn growth was diffusion-controlled. In addition, the current can strongly influence the orientation of Cu6Sn5 phase in Cu-molten Sn-Cu system. There was a strong texture of [0001] direction in Cu6Sn5 phase, which was paralleled with the direction of electron flow. This result indicated that the electrons traveled along some particular directions and were scattered least by the lattices. The newly formed Cu-Sn compounds orientated themselves in those particular growth directions to facilitate electron flow.
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