{"title":"三维NAND快闪存储单元中氮化物电荷陷阱层陷阱轮廓的研究","authors":"Jong-Ho Lee, Ho-Jung Kang","doi":"10.1109/CSTIC.2017.7919730","DOIUrl":null,"url":null,"abstract":"We extract the trap density (N<inf>t</inf>) profile of the nitride storage layer in 3-D NAND flash memory cells. The adjacent cells which are programmed suppress significantly the lateral diffusion during retention measurement so that we can extract accurate N<inf>t</inf> profile. The AC-g<inf>m</inf> method makes the N<inf>t</inf> profiling in an E<inf>C</inf>-E<inf>T</inf> range of 1∼1.2 eV possible, and provides a Gaussian N<inf>t</inf> profile together with the retention model. The threshold voltage shift with trapped electron profiles is firstly modeled as a parameter of channel radius and its model is verified.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"34 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of trap profile in nitride charge trap layer in 3-D NAND flash memory cells\",\"authors\":\"Jong-Ho Lee, Ho-Jung Kang\",\"doi\":\"10.1109/CSTIC.2017.7919730\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We extract the trap density (N<inf>t</inf>) profile of the nitride storage layer in 3-D NAND flash memory cells. The adjacent cells which are programmed suppress significantly the lateral diffusion during retention measurement so that we can extract accurate N<inf>t</inf> profile. The AC-g<inf>m</inf> method makes the N<inf>t</inf> profiling in an E<inf>C</inf>-E<inf>T</inf> range of 1∼1.2 eV possible, and provides a Gaussian N<inf>t</inf> profile together with the retention model. The threshold voltage shift with trapped electron profiles is firstly modeled as a parameter of channel radius and its model is verified.\",\"PeriodicalId\":6846,\"journal\":{\"name\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"34 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-03-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC.2017.7919730\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919730","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation of trap profile in nitride charge trap layer in 3-D NAND flash memory cells
We extract the trap density (Nt) profile of the nitride storage layer in 3-D NAND flash memory cells. The adjacent cells which are programmed suppress significantly the lateral diffusion during retention measurement so that we can extract accurate Nt profile. The AC-gm method makes the Nt profiling in an EC-ET range of 1∼1.2 eV possible, and provides a Gaussian Nt profile together with the retention model. The threshold voltage shift with trapped electron profiles is firstly modeled as a parameter of channel radius and its model is verified.
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