一个功能齐全的90nm 8Mb STT MRAM演示器，具有修剪的参考细胞传感

2015 IEEE Custom Integrated Circuits Conference (CICC) Pub Date : 2015-11-30 DOI:10.1109/CICC.2015.7338359

J. DeBrosse, T. Maffitt, Yutaka Nakamura, G. Jan, P. Wang

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引用次数: 4

摘要

自旋传递转矩磁阻RAM (STT MRAM)具有独特的写入性能和持久性能。然而，很少有STT MRAM电路硬件数据发表[1-4]。本文描述了一个功能齐全的90nm 8Mb STT MRAM，确定并描述了主要电路挑战的解决方案，并包括大量的电路硬件数据。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A fully-functional 90nm 8Mb STT MRAM demonstrator featuring trimmed, reference cell-based sensing

Spin Transfer Torque Magnetoresistive RAM (STT MRAM) has uniquely attractive write performance and endurance characteristics. Nonetheless, little STT MRAM circuit hardware data has been published [1-4]. This paper describes a fully-functional 90nm 8Mb STT MRAM, identifies and describes solutions to the primary circuit challenges, and includes considerable circuit hardware data.

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2015 IEEE Custom Integrated Circuits Conference (CICC)

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