Tb和Mn共掺铋铁氧体嵌入聚乙烯醇纳米复合膜的电输运性质

Monalisa Halder, A. Meikap
{"title":"Tb和Mn共掺铋铁氧体嵌入聚乙烯醇纳米复合膜的电输运性质","authors":"Monalisa Halder, A. Meikap","doi":"10.1063/1.5113268","DOIUrl":null,"url":null,"abstract":"Tb and Mn codoped Bismuth Ferrite (BTFMO) nanoparticles of crystallite size 45 nm and 2.0 wt% BTFMO- PVA nanocomposite film are synthesized by sol gel method. From Williamson-Hall analysis, strain is found to be 0.4%. Morphological Study reveals the uniform dispersion of BTFMO nanofillers in the PVA matrix. Modified Cole-Cole model is well-fitted with the experimentally observed temperature dependent dielectric response of the film sample above room temperature. A non-Debye type asymmetric behavior is observed. Relaxation time tends to decrease with increasing temperature. Current-voltage study of the film under ±50 V applied voltage exhibits temperature dependent rectifying nature indicating the formation of back to back Schottky Barrier Diode (SBD) with barrier height 0.94eV.Tb and Mn codoped Bismuth Ferrite (BTFMO) nanoparticles of crystallite size 45 nm and 2.0 wt% BTFMO- PVA nanocomposite film are synthesized by sol gel method. From Williamson-Hall analysis, strain is found to be 0.4%. Morphological Study reveals the uniform dispersion of BTFMO nanofillers in the PVA matrix. Modified Cole-Cole model is well-fitted with the experimentally observed temperature dependent dielectric response of the film sample above room temperature. A non-Debye type asymmetric behavior is observed. Relaxation time tends to decrease with increasing temperature. Current-voltage study of the film under ±50 V applied voltage exhibits temperature dependent rectifying nature indicating the formation of back to back Schottky Barrier Diode (SBD) with barrier height 0.94eV.","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"91 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrical transport properties of Tb and Mn codoped bismuth ferrite embedded poly (vinyl alcohol) nanocomposite film\",\"authors\":\"Monalisa Halder, A. Meikap\",\"doi\":\"10.1063/1.5113268\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Tb and Mn codoped Bismuth Ferrite (BTFMO) nanoparticles of crystallite size 45 nm and 2.0 wt% BTFMO- PVA nanocomposite film are synthesized by sol gel method. From Williamson-Hall analysis, strain is found to be 0.4%. Morphological Study reveals the uniform dispersion of BTFMO nanofillers in the PVA matrix. Modified Cole-Cole model is well-fitted with the experimentally observed temperature dependent dielectric response of the film sample above room temperature. A non-Debye type asymmetric behavior is observed. Relaxation time tends to decrease with increasing temperature. Current-voltage study of the film under ±50 V applied voltage exhibits temperature dependent rectifying nature indicating the formation of back to back Schottky Barrier Diode (SBD) with barrier height 0.94eV.Tb and Mn codoped Bismuth Ferrite (BTFMO) nanoparticles of crystallite size 45 nm and 2.0 wt% BTFMO- PVA nanocomposite film are synthesized by sol gel method. From Williamson-Hall analysis, strain is found to be 0.4%. Morphological Study reveals the uniform dispersion of BTFMO nanofillers in the PVA matrix. Modified Cole-Cole model is well-fitted with the experimentally observed temperature dependent dielectric response of the film sample above room temperature. A non-Debye type asymmetric behavior is observed. Relaxation time tends to decrease with increasing temperature. Current-voltage study of the film under ±50 V applied voltage exhibits temperature dependent rectifying nature indicating the formation of back to back Schottky Barrier Diode (SBD) with barrier height 0.94eV.\",\"PeriodicalId\":10874,\"journal\":{\"name\":\"DAE SOLID STATE PHYSICS SYMPOSIUM 2018\",\"volume\":\"91 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"DAE SOLID STATE PHYSICS SYMPOSIUM 2018\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/1.5113268\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.5113268","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

采用溶胶-凝胶法制备了Tb和Mn共掺杂铋铁氧体(BTFMO)纳米颗粒,晶粒尺寸为45 nm, BTFMO- PVA纳米复合膜质量分数为2.0 wt%。Williamson-Hall分析发现应变为0.4%。形态学研究表明,BTFMO纳米填料在聚乙烯醇基体中分布均匀。修正的Cole-Cole模型能很好地拟合室温以上薄膜样品的介电响应随温度的变化。观察到非德拜型不对称行为。弛豫时间随温度的升高而减小。在±50 V电压下对薄膜的电流电压研究显示出温度相关的整流性质,表明形成了势垒高度为0.94eV的背对背肖特基势垒二极管(SBD)。采用溶胶-凝胶法制备了Tb和Mn共掺杂铋铁氧体(BTFMO)纳米颗粒,晶粒尺寸为45 nm, BTFMO- PVA纳米复合膜质量分数为2.0 wt%。Williamson-Hall分析发现应变为0.4%。形态学研究表明,BTFMO纳米填料在聚乙烯醇基体中分布均匀。修正的Cole-Cole模型能很好地拟合室温以上薄膜样品的介电响应随温度的变化。观察到非德拜型不对称行为。弛豫时间随温度的升高而减小。在±50 V电压下对薄膜的电流电压研究显示出温度相关的整流性质,表明形成了势垒高度为0.94eV的背对背肖特基势垒二极管(SBD)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Electrical transport properties of Tb and Mn codoped bismuth ferrite embedded poly (vinyl alcohol) nanocomposite film
Tb and Mn codoped Bismuth Ferrite (BTFMO) nanoparticles of crystallite size 45 nm and 2.0 wt% BTFMO- PVA nanocomposite film are synthesized by sol gel method. From Williamson-Hall analysis, strain is found to be 0.4%. Morphological Study reveals the uniform dispersion of BTFMO nanofillers in the PVA matrix. Modified Cole-Cole model is well-fitted with the experimentally observed temperature dependent dielectric response of the film sample above room temperature. A non-Debye type asymmetric behavior is observed. Relaxation time tends to decrease with increasing temperature. Current-voltage study of the film under ±50 V applied voltage exhibits temperature dependent rectifying nature indicating the formation of back to back Schottky Barrier Diode (SBD) with barrier height 0.94eV.Tb and Mn codoped Bismuth Ferrite (BTFMO) nanoparticles of crystallite size 45 nm and 2.0 wt% BTFMO- PVA nanocomposite film are synthesized by sol gel method. From Williamson-Hall analysis, strain is found to be 0.4%. Morphological Study reveals the uniform dispersion of BTFMO nanofillers in the PVA matrix. Modified Cole-Cole model is well-fitted with the experimentally observed temperature dependent dielectric response of the film sample above room temperature. A non-Debye type asymmetric behavior is observed. Relaxation time tends to decrease with increasing temperature. Current-voltage study of the film under ±50 V applied voltage exhibits temperature dependent rectifying nature indicating the formation of back to back Schottky Barrier Diode (SBD) with barrier height 0.94eV.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Structural, dielectric, semiconducting and optical properties of high-energy ball milled YFeO3 nano-particles Synergistic effect of rGO loading on Ni doped ZnO nanorods for enhanced photocatalytic performance The role of solvent in the formation of biodegradable polymer nanoparticles Thermal and optical properties of flake-like copper oxide nanostructure Bithiophene based red light emitting material - Photophysical and DFT studies
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1