一种防止亚阈值驼峰的新型费米能级控制高压晶体管

2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI:10.1109/SMICND.2008.4703412

Byoung-Chul Park, S. Lee, D. Chang, K. Bang, Sung-Jun Kim, Sang-bae Yi, E. Jung

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引用次数: 2

摘要

在高压晶体管(HVT)中，由于衬底掺杂浓度低，掺杂浓度或寄生电荷的变化很小，器件特性也会受到影响。在HVT的亚阈值区，硼偏析引起的驼峰对器件的性能有不良影响。在本文中，我们提出了一种新的费米能级控制HVT (FCHVT)来简单地消除驼峰效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A novel fermi level controlled High Voltage Transistor preventing sub-threshold hump

In high voltage transistor (HVT), device characteristics could be affected by little changes of doping concentration or parasitic charges due to low substrate doping concentrations. Humps caused by boron segregation in sub-threshold region of HVT make bad effects on device characteristics. In this paper, we have presented the novel Fermi leve controlled HVT (FCHVT) to simply eliminate hump effects.

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来源期刊

2008 IEEE International Conference on Semiconductor Electronics

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