PVK和二茂铁掺杂PVK薄膜的电导调制

Hari Chandra Nayak, Shivendra Singh Parmar, R. P. Kumhar, S. Rajput
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引用次数: 2

摘要

本文研究了聚(9-乙烯基咔唑)(PVK)薄膜和二茂铁掺杂PVK薄膜的介电性能。采用等温溶液铸造技术生长薄膜。研究了二茂铁浓度、频率和温度对生长膜介电性能的影响。由于自由载流子的存在,相对介电常数ε′随二茂铁含量(~1%)的增加而增加。二茂铁含量越高(~2%),相对介电常数越小。然而,在研究的温度范围(313-413 K)内,PVK和二茂铁掺杂PVK样品的相对介电常数几乎保持不变,研究了所有样品的tan δ的频率依赖性。介质参数的频率依赖性表现为频散特性,表明在较低的频率范围内存在各种类型的极化。低频区温度越高,损耗正切(tanδ)值越大。然而,不同温度下的tan δ值在高频区几乎相似。结果表明,与纯PVK和2%二茂铁掺杂PVK相比,掺1%二茂铁PVK的相对介电常数最大,介电损耗最小,交流电导率最小。
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Modulation in Electric Conduction of PVK and Ferrocene-Doped PVK Thin Films
In this article, the dielectric properties of poly (9-vinylcarbazole) (PVK) and ferrocene-doped PVK thin films are studied. The thin films were grown by the isothermal solution casting technique. Dielectric properties of grown films were studied as function of ferrocene concentration, frequency, and temperature. The relative permittivity (ε′) is increased with increasing ferrocene percentage (~1%) due to the free charge carriers. The relative permittivity decreases for higher ferrocene percentage (~2%). However, the relative permittivity of PVK and ferrocene-doped PVK samples remains almost constant for studied temperature range (313–413 K). The frequency dependence of tan δ for all samples is studied. The frequency dependence of dielectric parameter exhibits frequency dispersion behavior, which suggests all types of polarization present in the lower frequency range. The loss tangent (tanδ) values are larger at higher temperatures in the low frequency region. However, the tan δ values at different temperatures are almost similar in the high frequency region. It is observed that the relative permittivity is maximum, dielectric loss is minimum, and AC conductivity is minimum for 1% ferrocene doped PVK as compared to pure PVK and 2% ferrocene doped PVK samples.
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