硅柱上水平排列碳纳米管的场发射特性研究

V. Zhigalov, M. Putrya, A. Romashkin, Y. Chaplygin, A. Golishnikov
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引用次数: 0

摘要

碳纳米管被认为是在各种应用中用作发射层的最佳候选材料之一。碳纳米管作为场发射体存在一些缺陷,限制了其广泛应用。主要是由于纳米管燃烧引起的尖端不均匀性和发射电流的降低。在这项工作中,我们展示了一种简单而廉价的高效碳纳米管阴极制造方法。单壁碳纳米管水平放置在博世工艺制造的硅柱上,表现出低场发射(发射始于100 V,阳极-阴极距离为3µm)和足够的电流密度,在200 V偏置(2000µm2发射面积)下高达8.5 A/cm2。此外,还显示了与垂直排列的碳纳米管阴极的比较。
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Field Emission from Horizontally Aligned Carbon Nanotubes Deposited on Si Pillars
Carbon nanotubes are considered as one of the best candidates to be used as an emission layer in various applications. There are some drawbacks, which limit the wide use of CNT as field emitters. Mainly, it is a non-uniformity of the tips and degradation of emission current due to the nanotubes burning. In this work, we show the simple and cheap method of highly effective CNT cathodes fabrication. Single-walled CNT are located horizontally on the Si pillars made by Bosch process and demonstrate low field emission (emission starts at 100 V with an anode-cathode distance of 3 µm) and sufficient current densities as large as 8.5 A/cm2 at 200 V bias (2000 µm2 emitting area). Additionally, the comparison with vertically aligned the CNT cathodes is shown.
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