{"title":"埋藏通道电荷耦合器件中的电荷分布","authors":"W. H. Kent","doi":"10.1002/J.1538-7305.1973.TB02000.X","DOIUrl":null,"url":null,"abstract":"This paper studies charge distribution in buried-channel charge-coupled devices. Detailed development of a one-dimensional electrostatic model is presented and a numerical solution of the resulting nonlinear potential equations is described. Graphical results show the charge-filling mechanism and the relationship between the oxide-semiconductor interface potential and total free positive charge.","PeriodicalId":55391,"journal":{"name":"Bell System Technical Journal","volume":"35 1","pages":"1009-1024"},"PeriodicalIF":0.0000,"publicationDate":"1973-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"35","resultStr":"{\"title\":\"Charge distribution in buried-channel charge-coupled devices\",\"authors\":\"W. H. Kent\",\"doi\":\"10.1002/J.1538-7305.1973.TB02000.X\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper studies charge distribution in buried-channel charge-coupled devices. Detailed development of a one-dimensional electrostatic model is presented and a numerical solution of the resulting nonlinear potential equations is described. Graphical results show the charge-filling mechanism and the relationship between the oxide-semiconductor interface potential and total free positive charge.\",\"PeriodicalId\":55391,\"journal\":{\"name\":\"Bell System Technical Journal\",\"volume\":\"35 1\",\"pages\":\"1009-1024\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1973-07-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"35\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bell System Technical Journal\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1002/J.1538-7305.1973.TB02000.X\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bell System Technical Journal","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/J.1538-7305.1973.TB02000.X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Charge distribution in buried-channel charge-coupled devices
This paper studies charge distribution in buried-channel charge-coupled devices. Detailed development of a one-dimensional electrostatic model is presented and a numerical solution of the resulting nonlinear potential equations is described. Graphical results show the charge-filling mechanism and the relationship between the oxide-semiconductor interface potential and total free positive charge.
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