化学束外延生长的GaAsN中N-H键优先取向

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI:10.1109/PVSC.2013.6744886

K. Ikeda, M. Inagaki, N. Kojima, Y. Ohshita, M. Yamaguchi

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摘要

化学束外延生长的GaAsN在961和2952 cm-1处的两种N-H局部振动模式具有相同的N-H键优先取向。综合红外吸收强度在(001)平面上表现为双重旋转对称，即N-H键方向在(001)平面上趋向于沿[1-10]排列。而在961和2952 cm-1处的振动模式属于不同类型的N-H配合物。因此，不同类型的N-H配合物具有相同的N-H键优先取向。

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Preferential N-H bond orientation in GaAsN grown by chemical beam epitaxy

Two N-H local vibration modes at 961 and 2952 cm-1 in GaAsN grown by the chemical beam epitaxy have the same preferential N-H bond orientation. The integrated IR absorption intensities showed the two-fold rotational symmetry in (001) plane, which means that the N-H bond directions tend to align along [1-10] in (001) plane. However, the vibration modes at 961 and 2952 cm-1 were indicated to belong to the different types of N-H complexes. Therefore, the different types of N-H complexes have the same preferential N-H bond orientation.

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2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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