考虑大摆幅容差的射频功率放大器片上ESD保护设计

Guan-Yi Li, Chun-Yu Lin
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引用次数: 2

摘要

为了有效地保护纳米级CMOS技术中的射频集成电路不受静电放电(ESD)的损坏,必须在片内可能受到静电放电损伤的焊盘处增加片内ESD保护电路。本文设计了一种大摆幅容限ESD保护电路,用于保护千兆赫大摆幅功率放大器。设计、制作了嵌入式可控硅二极管串ESD保护电路,并在硅芯片上进行了验证。由于具有较好的射频性能和ESD鲁棒性,DSSCR可以进一步应用于大摆幅PA。
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On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration
To effectively protect the radio-frequency (RF) integrated circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, the on-chip ESD protection circuits must be added at the pads that may be stressed by ESD. In this paper, a large-swing-tolerant ESD protection circuit is presented to protect the gigahertz large-swing power amplifier (PA). The proposed ESD protection circuit of diode string with embedded silicon-controlled rectifier (DSSCR) has been designed, fabricated, and verified in silicon chip. With the better RF performances and ESD robustness, the DSSCR can be further applied to the large-swing PA.
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