{"title":"Cu / (n) - CdS1-xSex薄膜肖特基二极管的制备与电学特性研究","authors":"M. Kale, Y. Attarde, D. S. Bhavsar","doi":"10.18535/IJSRE/V4I05.16","DOIUrl":null,"url":null,"abstract":"The present investigation describes the preparation and electrical characterization of CdS 1-x Se x based thin film Schottky diode. The formed single Schottky barrier shows characteristics comparable to the barrier formed by change in chemical composition. The thin films were prepared by vacuum thermal evaporation method under the pressure 2 × 10 -5 torr. I-V characteristics shows that the Cu makes Schottky contact with N-type CdS 1-x Se x thin film. The variation of junction current with voltage has been studied to evaluate the Schottky barrier height (ф B ). The ideality factor (η) of grown Schottky diodes was found near to ideality.","PeriodicalId":14282,"journal":{"name":"International Journal of Scientific Research in Education","volume":"80 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Fabrication and Electrical Characterizations of Cu / (n) - CdS1-xSex Thin Film Schottky Diode\",\"authors\":\"M. Kale, Y. Attarde, D. S. Bhavsar\",\"doi\":\"10.18535/IJSRE/V4I05.16\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The present investigation describes the preparation and electrical characterization of CdS 1-x Se x based thin film Schottky diode. The formed single Schottky barrier shows characteristics comparable to the barrier formed by change in chemical composition. The thin films were prepared by vacuum thermal evaporation method under the pressure 2 × 10 -5 torr. I-V characteristics shows that the Cu makes Schottky contact with N-type CdS 1-x Se x thin film. The variation of junction current with voltage has been studied to evaluate the Schottky barrier height (ф B ). The ideality factor (η) of grown Schottky diodes was found near to ideality.\",\"PeriodicalId\":14282,\"journal\":{\"name\":\"International Journal of Scientific Research in Education\",\"volume\":\"80 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Scientific Research in Education\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.18535/IJSRE/V4I05.16\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Scientific Research in Education","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.18535/IJSRE/V4I05.16","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
本研究描述了CdS -x Se -x薄膜肖特基二极管的制备和电学特性。所形成的单个肖特基势垒表现出与化学成分变化形成的势垒相当的特性。在2 × 10 -5 torr的压力下，采用真空热蒸发法制备薄膜。I-V特性表明Cu与n型CdS 1-x Se x薄膜发生肖特基接触。研究了结电流随电压的变化，以计算肖特基势垒高度。生长肖特基二极管的理想因数(η)接近理想。
Fabrication and Electrical Characterizations of Cu / (n) - CdS1-xSex Thin Film Schottky Diode
The present investigation describes the preparation and electrical characterization of CdS 1-x Se x based thin film Schottky diode. The formed single Schottky barrier shows characteristics comparable to the barrier formed by change in chemical composition. The thin films were prepared by vacuum thermal evaporation method under the pressure 2 × 10 -5 torr. I-V characteristics shows that the Cu makes Schottky contact with N-type CdS 1-x Se x thin film. The variation of junction current with voltage has been studied to evaluate the Schottky barrier height (ф B ). The ideality factor (η) of grown Schottky diodes was found near to ideality.
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