{"title":"基于二硫化钼膜的超灵敏温度传感器","authors":"Nishta Arora, A. Naik","doi":"10.1109/SENSORS47087.2021.9639750","DOIUrl":null,"url":null,"abstract":"We report an ultrathin molybdenum disulfide (MoS2) membrane-based temperature sensor with sensitivity in the sub-Kelvin range. The resonant frequency of ultrathin MoS2 resonators is extremely sensitive to the intrinsic strain of the membrane. We utilize the resonant frequency shift caused due to change in strain to demonstrate the potential of these devices for ultrasensitive temperature sensing. The temperature coefficient of frequency (TCf) of the MoS2 drum resonator is estimated to be −283 ppm/K. We also report the first study on the frequency stability of MoS2 resonators at room temperature. The Allan deviation of these resonators is ~5 × 10−5 at an integration time of 1 second. This study estimates the ultimate temperature detection limit of MoS2 membrane-based device.","PeriodicalId":6775,"journal":{"name":"2021 IEEE Sensors","volume":"117 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Molybdenum Disulfide Membrane-based Ultrasensitive Temperature Sensor\",\"authors\":\"Nishta Arora, A. Naik\",\"doi\":\"10.1109/SENSORS47087.2021.9639750\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report an ultrathin molybdenum disulfide (MoS2) membrane-based temperature sensor with sensitivity in the sub-Kelvin range. The resonant frequency of ultrathin MoS2 resonators is extremely sensitive to the intrinsic strain of the membrane. We utilize the resonant frequency shift caused due to change in strain to demonstrate the potential of these devices for ultrasensitive temperature sensing. The temperature coefficient of frequency (TCf) of the MoS2 drum resonator is estimated to be −283 ppm/K. We also report the first study on the frequency stability of MoS2 resonators at room temperature. The Allan deviation of these resonators is ~5 × 10−5 at an integration time of 1 second. This study estimates the ultimate temperature detection limit of MoS2 membrane-based device.\",\"PeriodicalId\":6775,\"journal\":{\"name\":\"2021 IEEE Sensors\",\"volume\":\"117 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE Sensors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SENSORS47087.2021.9639750\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE Sensors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSORS47087.2021.9639750","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Molybdenum Disulfide Membrane-based Ultrasensitive Temperature Sensor
We report an ultrathin molybdenum disulfide (MoS2) membrane-based temperature sensor with sensitivity in the sub-Kelvin range. The resonant frequency of ultrathin MoS2 resonators is extremely sensitive to the intrinsic strain of the membrane. We utilize the resonant frequency shift caused due to change in strain to demonstrate the potential of these devices for ultrasensitive temperature sensing. The temperature coefficient of frequency (TCf) of the MoS2 drum resonator is estimated to be −283 ppm/K. We also report the first study on the frequency stability of MoS2 resonators at room temperature. The Allan deviation of these resonators is ~5 × 10−5 at an integration time of 1 second. This study estimates the ultimate temperature detection limit of MoS2 membrane-based device.