CF4等离子体浸泡离子注入改善14nm节点mosfet在Si上的NiSi触点

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI:10.1109/IITC-MAM.2015.7325616

Haitao Zhang, J. Duchaine, F. Torregrosa, Linjie Liu, B. Hollander, U. Breuer, S. Mantl, Qing-Tai Zhao

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引用次数: 3

摘要

本文采用预硅化CF4等离子体浸没离子注入(PIII)的方法在16nm节点的Si上制备了高质量的NiSi薄触点。CF4 PIII改善了NiSi薄触点的热稳定性、层均匀性和界面粗糙度，认为这是由于C、F原子在晶界和NiSi/Si界面上的偏析造成的。CF4等离子体也降低了NiSi/p-Si的肖特基势垒高度，从而有望降低p+掺杂Si的接触电阻。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Improved NiSi contacts on Si by CF4 plasma immersion ion implantation for 14nm node MOSFETs

We present in this paper high quality thin NiSi contacts on Si for the 16nm node using pre-silicidation CF4 Plasma Immersion Ion Implantation (PIII) The thermal stability, the layer uniformity and the interface roughness of thin NiSi layers are improved by CF4 PIII, which is assumed to be caused by segregation of C, F atoms at the grain boundaries and at the NiSi/Si interface. The Schottky barrier height of NiSi/p-Si is also lowered by CF4 plasma, thus a lower contact resistance on p+ doped Si is expected.

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2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)

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